scholarly journals High-speed and efficient silicon modulator based on forward-biased pin diodes

2014 ◽  
Vol 2 ◽  
Author(s):  
Suguru Akiyama ◽  
Tatsuya Usuki
Keyword(s):  
High Speed ◽  
Pin Diodes ◽  
Silicon Modulator

scholarly journals 40 Gb/s high-speed silicon modulator for TE and TM polarisation

2011 ◽  
Author(s):  
F. Y. Gardes ◽  
D. J. Thomson ◽  
G. T. Reed
Keyword(s):  
High Speed ◽  
Silicon Modulator

High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes

1983 ◽  
Author(s):  
H. Yamamoto ◽  
T. Baji ◽  
H. Matsumaru ◽  
Y. Tanaka ◽  
K. Seki ◽  
...  
Keyword(s):  
High Speed ◽  
Sensor Array ◽  
Pin Diodes ◽  
Contact Type

Modeling high speed MRI coil switching using PIN diodes

2011 ◽  
Author(s):  
Robert H. Caverly ◽  
William E. Doherty ◽  
Ronald D. Watkins
Keyword(s):  
High Speed ◽  
Pin Diodes

scholarly journals Low-voltage, high speed, compact silicon modulator for BPSK modulation

2013 ◽  
Vol 21 (20) ◽  
pp. 23410 ◽  
Author(s):  
Tiantian Li ◽  
Junlong Zhang ◽  
Huaxiang Yi ◽  
Wei Tan ◽  
Qifeng Long ◽  
...  
Keyword(s):  
High Speed ◽  
Low Voltage ◽  
Bpsk Modulation ◽  
Silicon Modulator

scholarly journals Use of Active Metamaterial as a Phase Shifter Integrated into the Waveguide

2021 ◽  
Vol 7 (1) ◽  
pp. 54-62
Author(s):  
Yu. Pasternak ◽  
E. Ishchenko ◽  
V. Pendyurin ◽  
S. Fedorov
Keyword(s):  
Electromagnetic Wave ◽  
Crystal Lattice ◽  
Fundamental Mode ◽  
High Speed ◽  
Phase Shifter ◽  
Control Method ◽  
Pin Diodes ◽  
Active Metamaterials ◽  
Electrodynamic Modeling ◽  
Electromagnetic Crystal

Active metamaterials usage is one of the most promising ways to control the characteristics of antennas, waveguides, and other microwave devices. This article proposes the controlled metamaterial design in the form of an electromagnetic crystal with switches located at the nodes of the crystal lattice. This metamaterial application for changing the fundamental mode phase of the WR-137 waveguide is investigated. Controlling the characteristics of the metamaterial is performed by switching pin diodes at the nodes of the lattice, so this control method allows you to achieve a high speed system, as well as to switch only certain pin diodes. Electrodynamic modeling was carried out, on the basis of which the characteristics of the waveguide were obtained for different metamaterial closed nodes combination, which changes the the electromagnetic wave phase.

High-speed Silicon Modulator for Future VLSI Interconnect

2007 ◽  
Author(s):  
Ansheng Liu ◽  
Ling Liao ◽  
Doron Rubin ◽  
Juthika Basak ◽  
Hat Nguyen ◽  
...  
Keyword(s):  
High Speed ◽  
Silicon Modulator

Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments

2008 ◽  
Vol 600-603 ◽  
pp. 493-496 ◽  
Author(s):  
Dorothea Werber ◽  
Martin Aigner ◽  
D. Denoth ◽  
F. Wittmann ◽  
Gerhard Wachutka
Keyword(s):  
Charge Carrier ◽  
High Speed ◽  
Hole Concentration ◽  
Broad Band ◽  
Low Noise ◽  
Blue Laser ◽  
Charge Carrier Density ◽  
Carrier Distribution ◽  
Pin Diodes ◽  
Laser Absorption

We present an experimental equipment for studying the charge carrier distribution in the interior of bipolar 4H-SiC high power devices by means of laser absorption measurements. Since the light absorption coefficient in a semiconductor depends on the electron and hole concentration, the attenuation of a laser beam transmitted through a sample is an integral function of the local charge carrier density. In order to detect the tiny changes in the light intensity caused by the plasma-optical effect, a highly sensitive measurement set-up has been developed. Its crucial components are a low-noise blue laser and a high-speed and broad-band photo-diode amplifier circuit. Sample preparation is sophisticated and requires special care. We investigated charge carrier profiles in 4H-SiC pin-diodes in the high-injection regime at current densities between 175 A/cm² and 350 A/cm². The measured charge carrier profiles are in good agreement with computer simulations.

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