scholarly journals Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

2018 ◽  
Author(s):  
Elena Alexandra Serban
Keyword(s):  
Selective Area Growth ◽  
Group Iii ◽  
Selective Area ◽  
Area Growth ◽  
Nitride Semiconductor ◽  
Magnetron Sputter ◽  
Self Assembled ◽  
Group Iii Nitride

Selective-Area Growth of Self-Assembled InAs-QDs by Metal Mask Method for Optical Integrated Circuit Applications

2006 ◽  
Vol 959 ◽  
Author(s):  
Nobuhiko Ozaki ◽  
Yoshiaki Takata ◽  
Shunsuke Ohkouchi ◽  
Yoshimasa Sugimoto ◽  
Naoki Ikeda ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Optical Devices ◽  
Selective Area Growth ◽  
Peak Wavelength ◽  
Metal Mask ◽  
Selective Area ◽  
High Uniformity ◽  
All Optical ◽  
Area Growth ◽  
Self Assembled

ABSTRACTWe have developed a selective-area-growth (SAG) method of self-assembled InAs quantum dots (QDs) using a metal-mask (MM) combined with molecular beam epitaxy for realizing photonic crystal (PC) based ultra-small and ultra-fast all-optical devices (PC-SMZ and PC-FF). Successful SAG of QDs was confirmed by atomic-force-microscopy observations and photoluminescence (PL) measurements. High density and high uniformity comparable to those of conventional QDs grown without the MM were achieved; the QD density was 4 × 1010cm-2 and a linewidth of the PL peak was around 30meV at room temperature. In addition, insertion of a strain-reducing layer on the grown QD was effective for varying the PL peak wavelength of the QD from 1240nm to 1320nm without any extra optical degradation. The MM method reported here is promising for achieving the all optical devices, PC-SMZ and PC-FF, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.

scholarly journals ORDERED GAN/INGAN NANORODS ARRAYS GROWN BY MOLECULAR BEAM EPITAXY FOR PHOSPHOR-FREE WHITE LIGHT EMISSION

2012 ◽  
Vol 21 (01) ◽  
pp. 1250010 ◽  
Author(s):  
S. ALBERT ◽  
A. BENGOECHEA-ENCABO ◽  
M.A. SANCHEZ-GARCÍA ◽  
F. BARBAGINI ◽  
E. CALLEJA ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Optical Emission ◽  
Optical Quality ◽  
The Self ◽  
Selective Area Growth ◽  
Selective Area ◽  
Quantum Disk ◽  
Area Growth ◽  
Self Assembled

The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111) . The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into self-assembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations.

scholarly journals Theory of MBE Growth of Nanowires on Reflecting Substrates

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 253
Author(s):  
Vladimir G. Dubrovskii
Keyword(s):  
Radial Growth ◽  
Molecular Beam ◽  
Intermediate Stage ◽  
Selective Area Growth ◽  
Mbe Growth ◽  
Group Iii ◽  
Selective Area ◽  
Area Growth ◽  
Shadowing Effect ◽  
Axial Growth

Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor–liquid–solid and catalyst-free III-V NWs.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

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