Growth conditions of benthic diatoms affect quality and quantity of extracellular polymeric larval settlement cues

2005 ◽  
Vol 294 ◽  
pp. 109-116 ◽  
Author(s):  
C Lam ◽  
T Harder ◽  
PY Qian
Keyword(s):  
Larval Settlement ◽  
Growth Conditions ◽  
Benthic Diatoms ◽  
Settlement Cues

scholarly journals Trophic cues as possible triggers of mussel larval settlement in southeastern Brazil

2018 ◽  
Vol 31 ◽  
pp. 26 ◽  
Author(s):  
Inês Leal ◽  
Élodie Bouchard ◽  
Augusto A.V. Flores ◽  
Réjean Tremblay
Keyword(s):  
Fatty Acids ◽  
Bacterial Production ◽  
Saturated Fatty Acids ◽  
Larval Settlement ◽  
Southeastern Brazil ◽  
Benthic Habitat ◽  
Organic Detritus ◽  
Settlement Cues ◽  
Terrestrial Inputs ◽  
Final Settlement

Oligotrophic conditions may impose a nutritional challenge for the larval and early post-larval development of bivalves during the search for a suitable benthic habitat. Here we investigated what settlement cues might be important for mytilid populations in southeastern Brazil. Our results point to a trophic trigger mediating larval settlement that may include an effect of saturated fatty acids, probably linked to organic detritus and bacterial production deriving from terrestrial inputs. The prevalence of drifting in this population suggests it may be a strategy for individuals to delay final settlement until encountering favorable trophic environmental conditions.

Optimization of growth conditions for laboratory and field assessments using immobilized benthic diatoms

2014 ◽  
Vol 22 (8) ◽  
pp. 5919-5930 ◽  
Author(s):  
Tânia Vidal ◽  
Catarina Marques ◽  
Nelson Abrantes ◽  
Joana Luísa Pereira ◽  
Amadeu M. V. M. Soares ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Benthic Diatoms

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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