scholarly journals Method for estimating the in situ growth rate for a large pelagic diatom of Rhizosoleniacea

1996 ◽  
Vol 131 ◽  
pp. 219-224 ◽  
Author(s):  
A Kuwata ◽  
H Kanazawa ◽  
M Takahashi
Keyword(s):  
Growth Rate ◽  
In Situ Growth

In situ growth rate measurements for plasma processing of opaque materials

2002 ◽  
Vol 418 (2) ◽  
pp. 151-155
Author(s):  
A Salifu ◽  
G Zhang ◽  
Edward A Evans
Keyword(s):  
Growth Rate ◽  
Plasma Processing ◽  
In Situ Growth

In situ growth rate control of carbon nanotubes by optical imaging method

2007 ◽  
Vol 91 (19) ◽  
pp. 193102 ◽  
Author(s):  
Itaru Gunjishima ◽  
Takashi Inoue ◽  
Atsuto Okamoto
Keyword(s):  
Carbon Nanotubes ◽  
Growth Rate ◽  
Optical Imaging ◽  
Rate Control ◽  
Imaging Method ◽  
In Situ Growth ◽  
Growth Rate Control

An instrument for in situ growth rate characterization of mechanically strained crystals

1998 ◽  
Vol 69 (7) ◽  
pp. 2713-2719 ◽  
Author(s):  
A. M. Zikic ◽  
R. I. Ristic ◽  
J. N. Sherwood
Keyword(s):  
Growth Rate ◽  
In Situ Growth

In Situ Reflectometry During LPCVD Tungsten Growth.

1989 ◽  
Vol 168 ◽  
Author(s):  
Jisk Holleman ◽  
Albert Hasper ◽  
Jan Middelhoek
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Layer Thickness ◽  
Growth Process ◽  
Depth Profiling ◽  
Reduction Reaction ◽  
The Self ◽  
In Situ Growth ◽  
Reduction Case

AbstractThe formation of LPCVD tungsten by means of the reduction of WF6 with Si, H2 and SiH4 is monitored in situ using a wavelength adjustable reflectometer. The initial self stopping growth of W by Si reduction is strongly dependant on surface status [1]. SEM observations together with Auger depth profiling and weight measurements support a growth model of islands that grow laterally and vertically until islands touch. After the self stopping Si reduction the W layer was increased in thickness by either the h or SiH4 reduction. The surface roughness calculated from the reflectance appears to increase linearly with thickness in the case of H2 reduction. Typical rms roughness was found to be 7% of layer thickness in the H2 reduction case. The reflectance of H2 reduced W layers could be improved by interrupting the growth process with a renucleation step using SiH4. Selective deposition and in situ growth rate measurements can be monitored when the deposition is carried out on a grating of SiO2 as a mask. Precleaning of the reactor with an NF3 plasma results in a strong retardation of the H2 reduction reaction.

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