scholarly journals Complex and thermodynamic properties of polar liquids using time domain reflectometry in Microwave frequency

Author(s):  
Shagufta Tabassum
2018 ◽  
Vol 08 (05) ◽  
pp. 1850032
Author(s):  
Shagufta Tabassum ◽  
V. P. Pawar

The study of complex properties in a binary mixture of 1,2-dichloroethane (DE) and [Formula: see text]-methylformamide (NMF) polar liquids has been carried out in the frequency range of 10[Formula: see text]MHz to 30[Formula: see text]GHz for 11 different concentrations using time domain reflectometry technique at 283, 288, 293 and 298[Formula: see text]K temperatures. Complex property of binary liquids indicates the type of distribution of the dielectric relaxation time. The Bruggeman parameter gives the information about molecular interactions within binary polar liquids. Thermodynamic parameter deals with the passing of a dipole across a potential barrier which separates the minima of energy.


2018 ◽  
Vol 08 (03) ◽  
pp. 1850019 ◽  
Author(s):  
Shagufta Tabassum ◽  
V. P. Pawar

The study of complex properties in a binary mixture of polar liquids has been carried out in the frequency range of 10[Formula: see text]MHz to 30 GHz at 293[Formula: see text]K and 298[Formula: see text]K temperatures using time domain reflectometry. The complex properties of polar liquids in binary mixture give information about the frequency dispersion in the dielectric permittivity ([Formula: see text]) and dielectric loss ([Formula: see text]). The information regarding the orientation of electric dipoles in a polar liquid mixture is given by Kirkwood parameters. The Bruggeman parameters are used as the indicator of liquid1 and liquid2 interaction. Molar entropy ([Formula: see text]) and molar enthalpy ([Formula: see text]) are also discussed at the end of the paper.


2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.


Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.


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