Physical–Mathematical Model Of The Internal Quantum Efficiency Dependence On The Current Of Leds With Quantum Wells

2020 ◽  
pp. 9-16
Author(s):  
Fedor I. Manyakhin ◽  
Lyudmila O. Mokretsova
Keyword(s):  
Mathematical Model ◽  
Distribution Function ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Current Model ◽  
External Impact

A physical-mathematical model of dependence of internal quantum efficiency on current for LED structures with quantum wells has been developed. The volt-ampere characteristic is modelled with the involvement of Shockley, Noyce, Sah recombination theory, supplemented by the quantum wells distribution function. In order to obtain dependence of internal quantum efficiency of LEDs on current, model of rate of ABC recombination in quantum wells is used. The developed model was tested with variations of quantum wells parameters and external impact conditions.

scholarly journals Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Kazimieras Nomeika ◽  
Mantas Dmukauskas ◽  
Ramūnas Aleksiejūnas ◽  
Patrik Ščajev ◽  
Saulius Miasojedovas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Recombination Coefficient ◽  
Time Resolved ◽  
Mocvd Growth ◽  
Lower Strain ◽  
Type Contact ◽  
Ingan Quantum Wells

Enhancement of internal quantum efficiency (IQE) in InGaN quantum wells by insertion of a superlattice interlayer and applying the pulsed growth regime is investigated by a set of time-resolved optical techniques. A threefold IQE increase was achieved in the structure with the superlattice. It was ascribed to the net effect of decreased internal electrical field due to lower strain and altered carrier localization conditions. Pulsed MOCVD growth also resulted in twice higher IQE, presumably due to better control of defects in the structure. An LED (light emitting diode) structure with a top p-type contact GaN layer was manufactured by using both growth techniques with the peak IQE equal to that in the underlying quantum well structure. The linear recombination coefficient was found to gradually increase with excitation due to carrier delocalization, and the latter dependence was successfully used to fit the IQE droop.

Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

2014 ◽  
Vol 57 (4) ◽  
pp. 533-535 ◽  
Author(s):  
I. S. Romanov ◽  
I. A. Prudaev ◽  
А. А. Marmalyuk ◽  
V. A. Kureshov ◽  
D. R. Sabitov ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

scholarly journals Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

2011 ◽  
Vol 19 (S4) ◽  
pp. A991 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Jing Zhang ◽  
Jonathan D. Poplawsky ◽  
Volkmar Dierolf ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting

Internal quantum efficiency in polar and semipolar (11–22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

2018 ◽  
Vol 113 ◽  
pp. 129-134 ◽  
Author(s):  
Thi Huong Ngo ◽  
Nicolas Chery ◽  
Pierre Valvin ◽  
Aimeric Courville ◽  
Philippe de Mierry ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency
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