81. Collection Efficiency of the High Volume Small Surface Sampler on Worn Carpets

2002 ◽  
Author(s):  
E. Svendsen ◽  
P. Thorne ◽  
P. O'Shaughnessy ◽  
A. Quinones ◽  
D. Zimmerman ◽  
...  
2006 ◽  
Vol 3 (6) ◽  
pp. 334-341 ◽  
Author(s):  
Erik Svendsen ◽  
Peter Thorne ◽  
Patrick O'Shaughnessy ◽  
Dale Zimmerman ◽  
Stephen Reynolds

2008 ◽  
Vol 7 (1) ◽  
Author(s):  
Joanne S Colt ◽  
Robert B Gunier ◽  
Catherine Metayer ◽  
Marcia G Nishioka ◽  
Erin M Bell ◽  
...  

2000 ◽  
Vol 609 ◽  
Author(s):  
Jeremy A. Theil ◽  
Min Cao ◽  
Gerrit Kooi ◽  
Gary W. Ray ◽  
Wayne Greene ◽  
...  

ABSTRACTAmorphous silicon photodiode technology is a very attractive option for image array integrated circuits because it enables large die-size reduction and higher light collection efficiency than c-Si arrays. We have developed a photodiode array technology that is fully compatible with a 0.35νm CMOS process to produce image sensors arrays with 10-bit dynamic range that are 30% smaller than comparable c-Si photodiode arrays. The VGA (640x480), array demonstrated here uses common intrinsic and p-type contact layers, and makes reliable contact to those layers by use of a monolithic transparent conductor strap tied to vias in the interconnect. The work presented here will discuss performance issues and solutions that lend themselves to cost-effective high-volume manufacturing. The various methods of interconnection of the diode to the array and their advantages will be presented. The photodiode dark leakage current density is about 80 pA/cm2, and its absolute quantum efficiency peaks about 85% at 550 nm. The effect of doped layer thickness and concentration on quantum efficiency, and the effect of a-Si:H defect concentration on diode performance will be discussed.


1978 ◽  
Vol 12 (13) ◽  
pp. 1435-1437 ◽  
Author(s):  
Herman Sievering ◽  
Mehul J. Dave ◽  
Patric G. McCoy ◽  
Keith Walther

Author(s):  
D. E. Fornwalt ◽  
A. R. Geary ◽  
B. H. Kear

A systematic study has been made of the effects of various heat treatments on the microstructures of several experimental high volume fraction γ’ precipitation hardened nickel-base alloys, after doping with ∼2 w/o Hf so as to improve the stress rupture life and ductility. The most significant microstructural chan§e brought about by prolonged aging at temperatures in the range 1600°-1900°F was the decoration of grain boundaries with precipitate particles.Precipitation along the grain boundaries was first detected by optical microscopy, but it was necessary to use the scanning electron microscope to reveal the details of the precipitate morphology. Figure 1(a) shows the grain boundary precipitates in relief, after partial dissolution of the surrounding γ + γ’ matrix.


Author(s):  
H. Rose

The scanning transmission electron microscope offers the possibility of utilizing inelastically scattered electrons. Use of these electrons in addition to the elastically scattered electrons should reduce the scanning time (dose) Which is necessary to keep the quantum noise below a certain level. Hence it should lower the radiation damage. For high resolution, Where the collection efficiency of elastically scattered electrons is small, the use of Inelastically scattered electrons should become more and more favorable because they can all be detected by means of a spectrometer. Unfortunately, the Inelastic scattering Is a non-localized interaction due to the electron-electron correlation, occurring predominantly at the circumference of the atomic electron cloud.


Author(s):  
P.E. Batson

Use of the STEM to obtain precise electronic information has been hampered by the lack of energy loss analysis capable of a resolution and accuracy comparable to the 0.3eV energy width of the Field Emission Source. Recent work by Park, et. al. and earlier by Crewe, et. al. have promised magnetic sector devices that are capable of about 0.75eV resolution at collection angles (about 15mR) which are great enough to allow efficient use of the STEM probe current. These devices are also capable of 0.3eV resolution at smaller collection angles (4-5mR). The problem that arises, however, lies in the fact that, even with the collection efficiency approaching 1.0, several minutes of collection time are necessary for a good definition of a typical core loss or electronic transition. This is a result of the relatively small total beam current (1-10nA) that is available in the dedicated STEM. During this acquisition time, the STEM acceleration voltage may fluctuate by as much as 0.5-1.0V.


Author(s):  
J. R. Michael

X-ray microanalysis in the analytical electron microscope (AEM) refers to a technique by which chemical composition can be determined on spatial scales of less than 10 nm. There are many factors that influence the quality of x-ray microanalysis. The minimum probe size with sufficient current for microanalysis that can be generated determines the ultimate spatial resolution of each individual microanalysis. However, it is also necessary to collect efficiently the x-rays generated. Modern high brightness field emission gun equipped AEMs can now generate probes that are less than 1 nm in diameter with high probe currents. Improving the x-ray collection solid angle of the solid state energy dispersive spectrometer (EDS) results in more efficient collection of x-ray generated by the interaction of the electron probe with the specimen, thus reducing the minimum detectability limit. The combination of decreased interaction volume due to smaller electron probe size and the increased collection efficiency due to larger solid angle of x-ray collection should enhance our ability to study interfacial segregation.


Author(s):  
M.G. Burke ◽  
M.K. Miller

Interpretation of fine-scale microstructures containing high volume fractions of second phase is complex. In particular, microstructures developed through decomposition within low temperature miscibility gaps may be extremely fine. This paper compares the morphological interpretations of such complex microstructures by the high-resolution techniques of TEM and atom probe field-ion microscopy (APFIM).The Fe-25 at% Be alloy selected for this study was aged within the low temperature miscibility gap to form a <100> aligned two-phase microstructure. This triaxially modulated microstructure is composed of an Fe-rich ferrite phase and a B2-ordered Be-enriched phase. The microstructural characterization through conventional bright-field TEM is inadequate because of the many contributions to image contrast. The ordering reaction which accompanies spinodal decomposition in this alloy permits simplification of the image by the use of the centered dark field technique to image just one phase. A CDF image formed with a B2 superlattice reflection is shown in fig. 1. In this CDF micrograph, the the B2-ordered Be-enriched phase appears as bright regions in the darkly-imaging ferrite. By examining the specimen in a [001] orientation, the <100> nature of the modulations is evident.


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