Localization in High-Speed Motion using IMU-aided Event Flow Estimation

Author(s):  
Jae Hyung Jung ◽  
Chan Gook Park
2012 ◽  
Vol 49 (2) ◽  
pp. 300-318 ◽  
Author(s):  
John F. Joseph ◽  
Hatim O. Sharif ◽  
Jeffrey G. Arnold ◽  
David D. Bosch

2012 ◽  
Vol 24 (4) ◽  
pp. 686-698 ◽  
Author(s):  
Lei Chen ◽  
◽  
Hua Yang ◽  
Takeshi Takaki ◽  
Idaku Ishii

In this paper, we propose a novel method for accurate optical flow estimation in real time for both high-speed and low-speed moving objects based on High-Frame-Rate (HFR) videos. We introduce a multiframe-straddling function to select several pairs of images with different frame intervals from an HFR image sequence even when the estimated optical flow is required to output at standard video rates (NTSC at 30 fps and PAL at 25 fps). The multiframestraddling function can remarkably improve the measurable range of velocities in optical flow estimation without heavy computation by adaptively selecting a small frame interval for high-speed objects and a large frame interval for low-speed objects. On the basis of the relationship between the frame intervals and the accuracies of the optical flows estimated by the Lucas–Kanade method, we devise a method to determine multiple frame intervals in optical flow estimation and select an optimal frame interval from these intervals according to the amplitude of the estimated optical flow. Our method was implemented using software on a high-speed vision platform, IDP Express. The estimated optical flows were accurately outputted at intervals of 40 ms in real time by using three pairs of 512×512 images; these images were selected by frame-straddling a 2000-fps video with intervals of 0.5, 1.5, and 5 ms. Several experiments were performed for high-speed movements to verify that our method can remarkably improve the measurable range of velocities in optical flow estimation, compared to optical flows estimated for 25-fps videos with the Lucas–Kanade method.


2013 ◽  
Vol 22 ◽  
pp. 945-953 ◽  
Author(s):  
Kyosuke Sato ◽  
Haiyuan Wu ◽  
Qian Chen

Author(s):  
E.D. Wolf

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.


Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.


Author(s):  
William Krakow

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.


Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


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