scholarly journals Development of high efficiency power electronics converter for medium voltage drive

2016 ◽  
Author(s):  
Rajesh Sapkota
Keyword(s):  
Power Electronics ◽  
High Efficiency ◽  
Medium Voltage ◽  
Power Electronics Converter

Losses in Medium-Voltage Megawatt-Rated Direct AC/AC Power Electronics Converters

2015 ◽  
Vol 30 (7) ◽  
pp. 3553-3562 ◽  
Author(s):  
Rohit Moghe ◽  
Rajendra P. Kandula ◽  
Amrit Iyer ◽  
Deepak Divan
Keyword(s):  
Power Electronics ◽  
Medium Voltage ◽  
Power Electronics Converters ◽  
Ac Power

(Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics

2021 ◽  
Vol MA2021-02 (32) ◽  
pp. 958-958
Author(s):  
Robert J. Kaplar ◽  
Andrew A. Allerman ◽  
Mary H. Crawford ◽  
Brendan P. Gunning ◽  
Jack D. Flicker ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
Medium Voltage

SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors

2010 ◽  
Vol 645-648 ◽  
pp. 1101-1106 ◽  
Author(s):  
Jürgen Biela ◽  
Mario Schweizer ◽  
Stefan Waffler ◽  
Benjamin Wrzecionko ◽  
Johann Walter Kolar
Keyword(s):  
Band Gap ◽  
Power Electronics ◽  
Power Density ◽  
Performance Improvement ◽  
Wide Band ◽  
System Level ◽  
Wide Band Gap ◽  
Power Semiconductors ◽  
Power Electronics Converter ◽  
The Impact

Switching devices based on wide band gap materials as SiC oer a signicant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.

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