scholarly journals Development and characterization of low dielectric constant polymers for microelectronic applications

2008 ◽  
Author(s):  
Junluo Feng
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Characterization of Spin -on Glasses by Microindentation.

1998 ◽  
Vol 511 ◽  
Author(s):  
Eva E. Simonyi ◽  
K.-W. Lee ◽  
Robert F. Cook ◽  
Eric G. Liniger ◽  
James Speidell
Keyword(s):  
Dielectric Constant ◽  
Life Expectancy ◽  
Polymeric Materials ◽  
Curing Temperature ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Bond Density ◽  
Microelectronics Industry ◽  
Preparation Parameter

ABSTRACTSpin-on glasses are candidates in the microelectronics industry as low dielectric constant insulating layers. Spin-on glasses are very brittle materials. This paper discusses measurement problems as relevant to the characterization of a brittle material by the indentation technique. As for all polymeric materials curing temperature is the most important preparation parameter. There is a correlation between hardness, Young's modulus, the onset of cracking with curing temperature. This dependence on curing temperature is also expressed by the change in Si-H bond density as shown by FTIR data. Life expectancy or aging characteristics were also investigated for these features. As an example results on silsesquioxane spin -on glasses are presented.

Characterization of Pore Structure in a Nanoporous Low-Dielectric-Constant Thin Film by Neutron Porosimetry and X-ray Porosimetry

Langmuir ◽  
2004 ◽  
Vol 20 (16) ◽  
pp. 6658-6667 ◽  
Author(s):  
Ronald C. Hedden ◽  
Hae-Jeong Lee ◽  
Christopher L. Soles ◽  
Barry J. Bauer
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Low Dielectric Constant ◽  
X Ray ◽  
Low Dielectric
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