scholarly journals Investigations of the dielectric-semiconductor interface and bulk dielectric effects on charge transport in high performance organic field effect transistors on flexible substrates

2010 ◽  
Author(s):  
Huei Shuan Tan
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Flexible Substrates ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface

Anisotropic Strain Effect on Electron Transport in C60 Organic Field Effect transistors

2013 ◽  
Vol 1501 ◽  
Author(s):  
Akash Nigam ◽  
Günther Schwabegger ◽  
Mujeeb Ullah ◽  
Rizwan Ahmed ◽  
Ivan I. Fishchuk ◽  
...  
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Field Effect ◽  
High Performance ◽  
Tensile Strain ◽  
Field Effect Transistors ◽  
Compressive Strain ◽  
Strain Effect ◽  
Wearable Electronics ◽  
Organic Field Effect Transistors

ABSTRACTMechanical flexibility is one of the key advantages of organic semiconducting films in applications such as wearable-electronics or flexible displays. The present study is aimed at gaining deeper insight into the effect of strain on charge transport properties of the organic semiconductor films. We have fabricated high performance C60 top gate organic field effect transistors (OFET) on flexible substrates and characterized the devices by curling the substrates in concave and convex manner, to apply varying values of compressive and tensile strain, respectively. Electron mobility is found to increase with compressive strain and decrease with tensile strain. The observed strain effect is found to be strongly anisotropic with respect to the direction of flow of current. This observation on mobility is quantified using an Extended Gaussian Disorder Model (EGDM) for the hopping charge transport. We suggest that the observed strain dependence of the electron transport is dominated by a change in the effective charge hopping distance over the grain boundaries in polycrystalline C60 films.

High performance single-crystalline organic field-effect transistors based on molecular-modified dibenzo[a,e]pentalenes derivatives

2020 ◽  
Vol 44 (40) ◽  
pp. 17552-17557
Author(s):  
Fan Yin ◽  
Long Wang ◽  
Xiankai Yang ◽  
Meihui Liu ◽  
Hua Geng ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

Modulating the charge transport properties realized by a controllable molecular structure resulted in different packing arrangements.

Solution-grown unidirectionally oriented crystalline thin films of a U-shaped thienoacene-based semiconductor for high-performance organic field-effect transistors

2017 ◽  
Vol 5 (24) ◽  
pp. 5872-5876 ◽  
Author(s):  
Tatsuya Mori ◽  
Tatsuya Oyama ◽  
Hideaki Komiyama ◽  
Takuma Yasuda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Lamellar Structures

Strategically dialkylated bis(benzo[4,5]thieno)[2,3-b:3′,2′-d]thiophene molecules having an overall U-shaped configuration can self-organize into bilayer lamellar structures, demonstrating high charge-transport properties in thin-film organic transistors.

Enhancement of Charge Injection in Organic Field-Effect Transistors Through Semiconducting Organic Buffer Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3923-3928
Author(s):  
Gyujeong Lee ◽  
Hea-Lim Park ◽  
Sin-Hyung Lee ◽  
Min-Hoi Kim ◽  
Sin-Doo Lee
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Systematic Investigation ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Molecular Semiconductors ◽  
Injection Barrier

We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.

Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 8631-8642
Author(s):  
Tomoya Taguchi ◽  
Fabio Chiarella ◽  
Mario Barra ◽  
Federico Chianese ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
Sign in / Sign up

Export Citation Format

Share Document