scholarly journals MOCVD growth and characterization of quantum dots for mid-infrared emission

2008 ◽  
Author(s):  
Zong You Yin
Keyword(s):  
Quantum Dots ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Mocvd Growth

MOCVD Growth and Characterization of InN Quantum Dots

2020 ◽  
Vol 257 (4) ◽  
pp. 1900508 ◽  
Author(s):  
Caroline E. Reilly ◽  
Shuji Nakamura ◽  
Steven P. DenBaars ◽  
Stacia Keller
Keyword(s):  
Quantum Dots ◽  
Mocvd Growth

MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors

1997 ◽  
Vol 174 (1-4) ◽  
pp. 605-610 ◽  
Author(s):  
M.C. Hanna ◽  
Z.H. Lu ◽  
A.F. Cahill ◽  
M.J. Heben ◽  
A.J. Nozik
Keyword(s):  
Quantum Dots ◽  
Optical Characterization ◽  
Mocvd Growth

scholarly journals Fabrication and characterization of mid-infrared emission of Pr3+ doped selenide chalcogenide glasses and fibres

RSC Advances ◽  
2017 ◽  
Vol 7 (66) ◽  
pp. 41520-41526 ◽  
Author(s):  
Zijun Liu ◽  
Junyi Bian ◽  
Yan Huang ◽  
Tiefeng Xu ◽  
Xunsi Wang ◽  
...  
Keyword(s):  
Chalcogenide Glasses ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Fabrication And Characterization

Mid-infrared (2.8–5.5 μm) Pr3+ (2050 ppmw) doped fibres were obtained and characterized under the pump of a 2.0 μm laser.

Tuning of mid-infrared emission of ternary PbSrTe/CdTe quantum dots

2012 ◽  
Vol 100 (11) ◽  
pp. 113112 ◽  
Author(s):  
A. Hochreiner ◽  
S. Kriechbaumer ◽  
T. Schwarzl ◽  
H. Groiss ◽  
M. Hassan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Emission ◽  
Cdte Quantum Dots ◽  
Mid Infrared

Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots

2006 ◽  
Vol 88 (19) ◽  
pp. 191118 ◽  
Author(s):  
D. Wasserman ◽  
C. Gmachl ◽  
S. A. Lyon ◽  
E. A. Shaner
Keyword(s):  
Quantum Dots ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Inas Quantum Dots ◽  
Multiple Wavelength

Mid-Infrared Emission in InAs/GaAs Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Boucaud ◽  
S. Sauvage ◽  
T. Brunhes ◽  
F. Glotin ◽  
R. Prazeres ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Spontaneous Emission ◽  
Optical Pumping ◽  
Three Dimensional ◽  
Infrared Emission ◽  
Nonlinear Susceptibility ◽  
Mid Infrared ◽  
Third Harmonic ◽  
Self Assembled

ABSTRACTWe have investigated the emission properties of InAs/GaAs self-assembled quantum dots in the mid-infrared. The emission relies on the intraband transitions in the valence band of the quantum dots. We first show that third-harmonic generation can be observed. The frequency tripling efficiency is enhanced by the resonances between the pump excitation and the quantum dot intraband transitions. A giant third-order nonlinear susceptibility is measured for one dot plane. The narrow spectral dependence of the nonlinear susceptibility is well explained by simulations which account for the three-dimensional confinement potential. We secondly show that the mid-infrared spontaneous emission between hole confined states can be observed under an interband optical pumping. The spontaneous emission involves transitions between either the ground and excited states or between excited states. These measurements demonstrate the potentiality of self-assembled quantum dots for mid-infrared emission.

MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm

2016 ◽  
Vol 455 ◽  
pp. 168-171 ◽  
Author(s):  
Hao Liu ◽  
Qi Wang ◽  
Jia Chen ◽  
Kai Liu ◽  
Xiaomin Ren
Keyword(s):  
Quantum Dots ◽  
Mocvd Growth
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