Cross-sectional Thickness at End Ventricular Systole

Increased nuclear size, resulting in an increase in the relative proportion of nuclear to cytoplasmic sizes, is an important morphologic criterion for the evaluation of neoplastic and pre-neoplastic cells. This paper describes investigations into the suitability of automated image analysis for quantitating changes in nuclear and cytoplasmic cross-sectional areas in exfoliated cells from tracheas treated with carcinogen.Neoplastic and pre-neoplastic lesions were induced in the tracheas of Syrian hamsters with the carcinogen N-methyl-N-nitrosourea. Cytology samples were collected intra-tracheally with a specially designed catheter (1) and stained by a modified Papanicolaou technique. Three cytology specimens were selected from animals with normal tracheas, 3 from animals with dysplastic changes, and 3 from animals with epidermoid carcinoma. One hundred randomly selected cells on each slide were analyzed with a Bausch and Lomb Pattern Analysis System automated image analyzer.

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X-Ray Replication of Submicrometer Linewidth Patterns

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078250 ◽

1977 ◽

Vol 35 ◽

pp. 136-137

Author(s):

Henry I. Smith ◽

D.C. Flanders

Keyword(s):

Electron Beam Lithography ◽

Cross Sectional ◽

X Ray ◽

Electron Backscattering ◽

Spatial Frequencies ◽

Cross Sectional Profile ◽

Carbon Foils ◽

Sectional Profile ◽

And Control ◽

Soft Radiation

Scanning electron beam lithography has been used for a number of years to write submicrometer linewidth patterns in radiation sensitive films (resist films) on substrates. On semi-infinite substrates, electron backscattering severely limits the exposure latitude and control of cross-sectional profile for patterns having fundamental spatial frequencies below about 4000 Å(l),Recently, STEM'S have been used to write patterns with linewidths below 100 Å. To avoid the detrimental effects of electron backscattering however, the substrates had to be carbon foils about 100 Å thick (2,3). X-ray lithography using the very soft radiation in the range 10 - 50 Å avoids the problem of backscattering and thus permits one to replicate on semi-infinite substrates patterns with linewidths of the order of 1000 Å and less, and in addition provides means for controlling cross-sectional profiles. X-radiation in the range 4-10 Å on the other hand is appropriate for replicating patterns in the linewidth range above about 3000 Å, and thus is most appropriate for microelectronic applications (4 - 6).

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A Field Emission System For Transmission Electron Microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071934 ◽

1973 ◽

Vol 31 ◽

pp. 298-299

Author(s):

Michel Troyonal ◽

Huei Pei Kuoal ◽

Benjamin M. Siegelal

Keyword(s):

Electron Microscope ◽

Field Emission ◽

Optical System ◽

High Vacuum ◽

Ultra High Vacuum ◽

Objective Lens ◽

Electron Optical System ◽

Cross Sectional ◽

Transmission Electron ◽

Emission System

A field emission system for our experimental ultra high vacuum electron microscope has been designed, constructed and tested. The electron optical system is based on the prototype whose performance has already been reported. A cross-sectional schematic illustrating the field emission source, preaccelerator lens and accelerator is given in Fig. 1. This field emission system is designed to be used with an electron microscope operated at 100-150kV in the conventional transmission mode. The electron optical system used to control the imaging of the field emission beam on the specimen consists of a weak condenser lens and the pre-field of a strong objective lens. The pre-accelerator lens is an einzel lens and is operated together with the accelerator in the constant angular magnification mode (CAM).

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