scholarly journals Increased Device Sensitivity

2020 ◽  
Author(s):  
Keyword(s):  
Device Sensitivity

scholarly journals Effect of Parasitic Capacitance on GMI Magnetic Sensor Performance

2013 ◽  
Vol 543 ◽  
pp. 261-264 ◽  
Author(s):  
Sebastien Saez ◽  
Basile Dufay ◽  
Christophe Dolabdjian ◽  
Arthur Yelon ◽  
David Ménard
Keyword(s):  
Noise Level ◽  
Resonance Effect ◽  
Parasitic Capacitance ◽  
Magnetic Sensor ◽  
Magnetic Sensors ◽  
Magnetic Noise ◽  
System Sensitivity ◽  
Sensor Performance ◽  
Sensor Sensitivity ◽  
Device Sensitivity

Magnetic sensors based on GMI devices are the subject of intensive research, as they appear promising for magnetometry applications. Performances of GMI magnetometers are often limited by the noise of the electronic setup. Thus, the present challenge is to increase the GMI device sensitivity (expressed in V/T) in order to decrease the equivalent magnetic noise of the system. In our previous work, we showed that the use of a pick-up coil in an off-diagonal configuration improves the magnetic sensor sensitivity and offers a promising approach for developing an inexpensive magnetometer with sub-pT/Hz equivalent magnetic noise levels. Ideally, the use of a coil increases the sensitivity linearly as a function of the number of turns. However, this effect is reduced by the parasitic capacitance of the coil. This affects the device sensitivity, noise level and system performance. The parasitic capacitance can degrade all of these, but also induces a resonance effect, which can help to optimize magnetometer sensitivity, and thus, its noise level. We analyze the effects of the parasitic capacitance on the system (sensitivity and noise) and propose optimization routes. We have obtained sensor sensitivity as high as 700 fT/Hz.

Piezoelectric Thin Film AlN Annular Dual Contour Mode Bandpass Filter

2005 ◽  
Author(s):  
Philip J. Stephanou ◽  
Gianluca Piazza ◽  
Carolyn D. White ◽  
Muthu B. J. Wijesundara ◽  
Albert P. Pisano
Keyword(s):  
Bandpass Filter ◽  
Form Factors ◽  
Building Blocks ◽  
Experimental Characterization ◽  
Modes Of Vibration ◽  
Fabrication Tolerances ◽  
Piezoelectric Thin Film ◽  
Device Sensitivity ◽  
Contour Mode

The following work presents the analytical, numerical and experimental characterization of a novel piezoelectric Aluminum Nitride MEMS bandpass filter. In contrast to multipole filters employing distinct mechanically or electrically coupled resonator building blocks, the passband of the device in the present work is defined by the proximity of two natural contour modes of vibration in a single annular resonator. The proposed implementation, albeit currently limited to dual-pole filters, results in smaller form factors and reduces device sensitivity to across wafer fabrication tolerances.

Integrated Visible optical filter and photodetector for detection of FRET signals

2014 ◽  
Vol 1689 ◽  
Author(s):  
P. Louro ◽  
A. Charneca ◽  
V. Silva ◽  
M. Vieira ◽  
A. Karmali
Keyword(s):  
Optical Filter ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Protein Detection ◽  
Free Form ◽  
Visible Range ◽  
Wavelength Band ◽  
Selective Sensitivity ◽  
Device Sensitivity ◽  
Electrical Bias

ABSTRACTIn this paper we present a multilayer device based on a-Si:H/a-SiC:H that operates as photodetector and optical filter. The use of such device in protein detection applications is pertinent in Fluorescence Resonance Energy Transfer (FRET) measurements that demand the detection of visible fluorescent signals located at specific wavelengths bands. This device was designed to operate in the visible range with a selective sensitivity dependent on the applied electrical bias. Several nanosensors were tested with a commercial spectrophotometer to judge the performance of the FRET signals using glucose solutions of different concentrations. Two nanosensors (FLIPglu-90μM and FLIPglu-600μM) were tested with a commercial spectrofluorimeter to judge the performance of the FRET signals by using glucose solutions of different concentrations. These measurements were carried out by using these nanosensors both in the free form and immobilized form on inner epidermis of onion bulb scale. The proposed device was used to demonstrate the possibility of FRET signals detection, using visible signals of similar wavelength and intensity. The device sensitivity was tuned to enhance the wavelength band of interest using adequate electrical biasing.

A New Theoretical Method for Transport Processes in Nanosensoristics

2012 ◽  
Vol 20 ◽  
pp. 143-149 ◽  
Author(s):  
Paolo di Sia
Keyword(s):  
Analytical Method ◽  
Mechanical Energy ◽  
Electrical Energy ◽  
Theoretical Method ◽  
Transport Processes ◽  
Nanowire Arrays ◽  
External Device ◽  
Important Correlation ◽  
Device Sensitivity ◽  
Very High

The approach for converting nanoscale mechanical energy into electrical energy using piezoelectric nanowire arrays has been shown by a deflection of the nanowires via a corrugated electrode operated up and down by ultrasounds. I have performed an analytical method for describing the most important quantities concerning transport phenomena; it predicts very high initial diffusion of charge. This behaviour appears via mechanical external device stresses, which assumes therefore the typical characteristics of a nanosensor. With this method it is possible to deduce interesting informations about the device sensitivity, focusing on the important correlation between sensitivity and high initial diffusivity of these materials at nanometric state.

Terahertz Detection with Field-effect Transistors: Intrinsic versus Device Sensitivity Limits

2014 ◽  
Author(s):  
Alvydas Lisauskas ◽  
Sebastian Boppel ◽  
Maris Bauer ◽  
Justinas Zdanevičius ◽  
Jonas Matukas ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Terahertz Detection ◽  
Device Sensitivity

Photonic crystal device sensitivity analysis with Wannier basis gradients

2005 ◽  
Vol 30 (3) ◽  
pp. 302 ◽  
Author(s):  
Yang Jiao ◽  
Shanhui Fan ◽  
David A. B. Miller
Keyword(s):  
Sensitivity Analysis ◽  
Photonic Crystal ◽  
Device Sensitivity

Design and Fabrication of a MEMS AC Electric Current Sensor

2008 ◽  
Vol 54 ◽  
pp. 350-355 ◽  
Author(s):  
Eli S. Leland ◽  
Richard M. White ◽  
Paul K. Wright
Keyword(s):  
Permanent Magnet ◽  
Electric Current ◽  
Permanent Magnets ◽  
Analytical Models ◽  
Current Sensor ◽  
Piezoelectric Cantilever ◽  
New Type ◽  
Self Powered ◽  
Network Technologies ◽  
Device Sensitivity

The need for energy efficiency combined with advances in compact sensor network technologies present an opportunity for a new type of sensor to monitor electricity usage in residential and commercial environments. A novel design for a self-powered, proximity based AC electric current sensor has been developed. This sensor device is constructed of a piezoelectric cantilever with a permanent magnet mounted to the cantilever's free end. When the sensor is placed in proximity to a wire carrying AC electric current, the permanent magnet couples to the wire's alternating magnetic field, deflecting the piezoelectric cantilever and thus producing a sinusoidal voltage proportional to the current being measured. Analytical models were developed to predict the magnetic forces and piezoelectric voltage output pertaining to this design. MEMS-scale cantilevers are currently under development using a three-mask process and aluminum nitride as the active piezoelectric material. Very small (300 μm) permanent magnets have been dispenser-printed using magnetic powders in a polymer matrix. Previously presented meso-scale (2-3 cm3) prototype devices exhibited sensitivities of 74 mV/A, while simulations suggest MEMS device sensitivity of 2-4 mV/A.

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