scholarly journals Filling Problem

2020 ◽  
Author(s):  
Keyword(s):  
2015 ◽  
Vol 55 (2) ◽  
pp. 249-262
Author(s):  
Dominic Dotterrer
Keyword(s):  

2013 ◽  
Vol 12 (21) ◽  
pp. 5967-5974 ◽  
Author(s):  
Zhao Ning ◽  
Shen Yifan ◽  
Chai Jiaqi ◽  
Mi Chao ◽  
Mi Weijian

1968 ◽  
Vol 5 (02) ◽  
pp. 427-435 ◽  
Author(s):  
John P. Mullooly

Consider an interval of the real line (0, x), x > 0; and place in it a random subinterval S(x) defined by the random variables Xx and Yx , the position of the center of S(x) and the length of S(x). The set (0, x)– S(x) consists of two intervals of length δ and η. Let a > 0 be a fixed constant. If δ ≦ a, then a random interval S(δ) defined by Xδ, Yδ is placed in the interval of length δ. If δ < a, the placement of the second interval is not made. The same is done for the interval of length η. Continue to place non-intersecting random subintervals in (0, x), and require that the lengths of all the random subintervals be ≦ a. The process terminates after a finite number of steps when all the segments of (0, x) uncovered by random subintervals are of length < a. At this stage, we say that (0, x) is saturated. Define N(a, x) as the number of random subintervals that have been placed when the process terminates. We are interested in the asymptotic behavior of the moments of N(a, x), for large x.


Author(s):  
Thomas A. Baer ◽  
David R. Noble ◽  
Rekha R. Rao ◽  
Anne M. Grillet

Filling operations, in which a viscous fluid displaces a gas in a complex geometry, occur with surprising frequency in many manufacturing processes. Difficulties in generating accurate models of these processes involve accurately capturing the interfacial boundary as it undergoes large motions and deformations, preventing dispersion and mass-loss during the computation, and robustly accounting for the effects of surface tension and wetting phenomena. This paper presents a numerical capturing algorithm using level set theory and finite element approximation. Important aspects of this work are addressing issues of mass-conservation and the presence of wetting effects. We have applied our methodology to a three-dimension model of a complicated filling problem. The simulated results are compared to experimental flow visualization data taken for filling of UCON oil in the identical geometry. Comparison of simulation and experiment indicates that the simulation conserved mass adequately and the simulated interface shape was in approximate agreement with experiment. Differences seen were largely attributed to inaccuracies in the wetting line model.


2009 ◽  
Vol 145-146 ◽  
pp. 193-196
Author(s):  
Gyu Hyun Kim ◽  
Soon Young Park ◽  
Seung Seok Pyo ◽  
Ji Hye Han ◽  
Jung Nam Kim ◽  
...  

As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane (PHPS) based spin-on dielectric (SOD) has been implemented for nanoscale devices because of self-planarization and excellent gap-filling property [1]. However, the stability of the SOD has been concerned about because it has relatively softer and more porous than conventional HDP oxide. In this paper, we report the effect of wet oxidant treatment on the stability of the SOD for STI gap-filling.


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