Audible Device Noise | ScienceGate

Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate

ACS Sensors ◽

10.1021/acssensors.8b01394 ◽

2019 ◽

Vol 4 (2) ◽

pp. 427-433 ◽

Cited By ~ 3

Author(s):

Xi Chen ◽

Si Chen ◽

Qitao Hu ◽

Shi-Li Zhang ◽

Paul Solomon ◽

...

Keyword(s):

Noise Reduction ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Schottky Junction ◽

Effect Transistor ◽

Device Noise

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Circuit-Based Characterization of Device Noise Using Phase Noise Data

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2009.2033535 ◽

2010 ◽

Vol 57 (6) ◽

pp. 1265-1272 ◽

Cited By ~ 4

Author(s):

Reza Navid ◽

Thomas H. Lee ◽

Robert W. Dutton

Keyword(s):

Phase Noise ◽

Noise Data ◽

Device Noise

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Wireless Communication Through Microtubule Analogue Device: Noise-Driven Machines in the Bio-Systems

Engineering Vibration, Communication and Information Processing - Lecture Notes in Electrical Engineering ◽

10.1007/978-981-13-1642-5_64 ◽

2018 ◽

pp. 735-749

Author(s):

Komal Saxena ◽

K. V. Karthik ◽

Suryakant Kumar ◽

D. Fujita ◽

Anirban Bandyopadhyay

Keyword(s):

Wireless Communication ◽

Device Noise ◽

Analogue Device

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Assessing the Impacts of Marine-Hydrokinetic Energy (MHK) Device Noise on Marine Systems by Using Underwater Acoustic Models as Enabling Tools

Marine Renewable Energy ◽

10.1007/978-3-319-53536-4_13 ◽

2017 ◽

pp. 305-322

Author(s):

Paul C. Etter

Keyword(s):

Underwater Acoustic ◽

Marine Systems ◽

Hydrokinetic Energy ◽

Acoustic Models ◽

Marine Hydrokinetic ◽

Device Noise

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Defining the Optimal Number of Actuators for Active Device Noise Reduction Applications

Advances in Intelligent Systems and Computing - Trends in Advanced Intelligent Control, Optimization and Automation ◽

10.1007/978-3-319-60699-6_28 ◽

2017 ◽

pp. 291-300 ◽

Cited By ~ 1

Author(s):

Stanisław Wrona ◽

Krzysztof Mazur ◽

Marek Pawełczyk

Keyword(s):

Noise Reduction ◽

Optimal Number ◽

Active Device ◽

Device Noise

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1/f Noise Behavior in Pentacene Organic Thin Film Transistors

MRS Proceedings ◽

10.1557/proc-598-bb11.54 ◽

1999 ◽

Vol 598 ◽

Author(s):

P. V. Necliudov ◽

D. J. Gundlach ◽

T. N. Jackson ◽

S. L. Rumyantsev ◽

M. S. Shur

Keyword(s):

Thin Film ◽

Conducting Polymers ◽

Thin Film Transistors ◽

Low Frequency ◽

Drain Current ◽

Frequency Noise ◽

Organic Thin Film ◽

Amorphous Si ◽

Parameter Values ◽

Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

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