scholarly journals [Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

2016 ◽  
Vol 4 (2) ◽  
pp. 109-115
Author(s):  
Rihito Kuroda ◽  
Takahiro Akutsu ◽  
Yasumasa Koda ◽  
Kenji Takubo ◽  
Hideki Tominaga ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Near Infrared ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Photodiode Array

scholarly journals Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 428
Author(s):  
Reza Masoudian Saadabad ◽  
Christian Pauly ◽  
Norbert Herschbach ◽  
Dragomir N. Neshev ◽  
Haroldo T. Hattori ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Speed ◽  
Near Infrared ◽  
Infrared Detector ◽  
High Quantum Efficiency ◽  
Fast Detection ◽  
High Quantum ◽  
Resonant Modes ◽  
Infrared Wavelengths ◽  
Dielectric Metasurface

Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel, a high-speed photodetector with a bandwidth of 65 GHz has been achieved. At the same time, high quantum efficiency for near-infrared illumination can be obtained by the engineering of optical resonant modes to localize optical energy inside the intrinsic Ge disks. Furthermore, small junction capacitance and the possibility of zero/low bias operation have been shown. Our results show that all-dielectric metasurfaces can improve the performance of photodetectors.

scholarly journals Infrared Light Emission From Semiconductor Devices

1996 ◽  
Author(s):  
D.L. Barton ◽  
P. Tangyunyong ◽  
J.M. Soden ◽  
A.Y. Liang ◽  
F.J. Low ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Quantum Efficiency ◽  
Near Infrared ◽  
Light Emission ◽  
Photon Emission ◽  
Ccd Camera ◽  
Infrared Light ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Cooled Ccd

Abstract We present results using near-infrared (NIR) cameras to study emission. characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 µm. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquidnitrogen- cooled, slow scan CCD camera (with a spectral range from 400-1100 nm). Our results show that the NIR camera images all of the defect classes studied here with much shorter integration times than the cooled CCD, suggesting that photon emission beyond 1 µm is significantly stronger than at shorter wavelengths.

A novel near-infrared nanomaterial with high quantum efficiency and its applications in real time in vivo imaging

2018 ◽  
Vol 29 (20) ◽  
pp. 205705 ◽  
Author(s):  
X X Cui ◽  
Q Fan ◽  
S J Shi ◽  
W H Wen ◽  
D F Chen ◽  
...  
Keyword(s):  
Real Time ◽  
Quantum Efficiency ◽  
In Vivo Imaging ◽  
Near Infrared ◽  
High Quantum Efficiency ◽  
High Quantum

Modulation of optical properties of ZnS QDs embedded glasses through aluminum and manganese doping

2021 ◽  
Author(s):  
Kai Li ◽  
Ying Ye ◽  
Wenchao Zhang ◽  
Yuzhou Hu ◽  
Ying Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
Information Display ◽  
Manganese Doping ◽  
High Quantum

Nontoxic cadmium-free ZnS and ZnSe QDs QDs with high quantum efficiency have drawn considerable attention for information display. Applications of ZnS and ZnSe QDs are limited by their short emission...

A novel high quantum efficiency SiGe Phototransistor detector

2021 ◽  
Author(s):  
Yang Xiang ◽  
Hongyun Xie ◽  
Yin Sha ◽  
Ruilang Ji ◽  
Fu Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum
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