scholarly journals Low Power Consumption Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters for 33-Megapixel 120-fps CMOS Image Sensor

Author(s):  
Toshihisa Watabe ◽  
Kazuya Kitamura ◽  
Takehide Sawamoto ◽  
Tomohiko Kosugi ◽  
Tomoyuki Akahori ◽  
...  
2012 ◽  
Vol 59 (12) ◽  
pp. 3426-3433 ◽  
Author(s):  
Kazuya Kitamura ◽  
Toshihisa Watabe ◽  
Takehide Sawamoto ◽  
Tomohiko Kosugi ◽  
Tomoyuki Akahori ◽  
...  

Advanced medical equipments embedded with the sensors, analog to digital converters (ADC) and other equipment. Gain amplifier and the comparator are key blocks in ADCs improvement. Comparator is the key element in achieving a low offset and high slew ratein the ADCs, in addition power and speed optimizationdesigns are preferred. To achieve high speed and low power a modified architecture of a comparator is introduced. A 5V two stage comparator is designed to meet the specifications as, offset value <8.4mV, power dissipation <1.5mW and slew rate>14.68V/µS. Cadence Virtuoso tools and SCL 0.18 µm technology parameters are used for design. Designed comparator shows improved slew rate and power consumption in comparison with the existing comparators


2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450005
Author(s):  
Murali Lingalugari ◽  
John Chandy ◽  
Faquir Jain ◽  
El-Sayed Hasaneen ◽  
Evan Heller

In this paper, we propose a new architecture for analog-to-digital converters (ADCs) using multistate spatial wavefunction-switched field-effect transistors (SWSFETs). SWSFETs are multiple quantum coupled well devices, where the wells are stacked vertically and the electron wavefunction switches from one well to another with the change in gate voltage. Quantum mechanical simulations of 3-well InGaAs-AlInAs SWSFET structures are presented. The designs and simulations of 2-bit and 3-bit ADCs using SWSFETs result in low power consumption and reduced device count which improves the speed of the data conversion.


Sensors ◽  
2020 ◽  
Vol 20 (13) ◽  
pp. 3649
Author(s):  
Minhyun Jin ◽  
Hyeonseob Noh ◽  
Minkyu Song ◽  
Soo Youn Kim

In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To detect the edges of images in the CIS, neighboring column data are compared in in-column memories after column-parallel analog-to-digital conversion with the proposed mask. The proposed built-in mask circuits are implemented in the CIS without a complex image signal processer to obtain edge images with high speed and low power consumption. According to the measurement results, edge images were successfully obtained with a maximum frame rate of 60 fps. A prototype sensor with 1920 × 1440 resolution was fabricated with a 90-nm 1-poly 5-metal CIS process. The area of the 4-shared 4T-active pixel sensor was 1.4 × 1.4 µm2, and the chip size was 5.15 × 5.15 mm2. The total power consumption was 9.4 mW at 60 fps with supply voltages of 3.3 V (analog), 2.8 V (pixel), and 1.2 V (digital).


2015 ◽  
Vol 719-720 ◽  
pp. 611-614
Author(s):  
Jia Rong Wang ◽  
Xiao Dong Xia ◽  
Zong Da Zhang ◽  
Han Yang

The successive approximation analog-to-digital converter (ADC) has been widely used in electronic devices due to the corresponding characteristics which are low cost, low power consumption, high accuracy and so on. This paper expounds a design of successive approximation A / D converter to show how to use TCL5615 which is a dual-channel serial 10-bit D/A converter (DAC) to make the conversion accuracy to reach 14-bit.


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