scholarly journals CROSS-SECTIONAL QUASI-LAMÉ MODES IN THIN-FILM PIEZOELECTRIC-ON-SILICON RESONATORS

2018 ◽  
Author(s):  
S. Shahraini ◽  
H. Fatemi ◽  
R. Abdolvand
Keyword(s):  
Thin Film ◽  
Cross Sectional ◽  
Silicon Resonators

High-resolution scanning electron microscopy of thin-film magnetic media of magnetic recording disk

1992 ◽  
Vol 50 (2) ◽  
pp. 1334-1335
Author(s):  
K. Ogura ◽  
H. Nishioka ◽  
N. Ikeo ◽  
T. Kanazawa ◽  
J. Teshima
Keyword(s):  
Thin Film ◽  
Fine Structure ◽  
High Resolution ◽  
Magnetic Recording ◽  
High Performance ◽  
Magnetic Hysteresis ◽  
Grain Structure ◽  
Magnetic Media ◽  
Cross Sectional ◽  
Resolution Observation

Structural appraisal of thin film magnetic media is very important because their magnetic characters such as magnetic hysteresis and recording behaviors are drastically altered by the grain structure of the film. However, in general, the surface of thin film magnetic media of magnetic recording disk which is process completed is protected by several-nm thick sputtered carbon. Therefore, high-resolution observation of a cross-sectional plane of a disk is strongly required to see the fine structure of the thin film magnetic media. Additionally, observation of the top protection film is also very important in this field.Recently, several different process-completed magnetic disks were examined with a UHR-SEM, the JEOL JSM 890, which consisted of a field emission gun and a high-performance immerse lens. The disks were cut into approximately 10-mm squares, the bottom of these pieces were carved into more than half of the total thickness of the disks, and they were bent. There were many cracks on the bent disks. When these disks were observed with the UHR-SEM, it was very difficult to observe the fine structure of thin film magnetic media which appeared on the cracks, because of a very heavy contamination on the observing area.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Cross-sectional X-ray nanobeam diffraction analysis of a compositionally graded CrNx thin film

2013 ◽  
Vol 542 ◽  
pp. 1-4 ◽  
Author(s):  
M. Bartosik ◽  
R. Daniel ◽  
C. Mitterer ◽  
I. Matko ◽  
M. Burghammer ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Cross Sectional ◽  
X Ray

FIB preparation of cross-sectional polymer thin film TEM samples

2008 ◽  
Vol 14 (S2) ◽  
pp. 996-997
Author(s):  
S Kim ◽  
A Minor
Keyword(s):  
Thin Film ◽  
New Mexico ◽  
Cross Sectional ◽  
Polymer Thin Film

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Characterization of the adhesion of thin film by Cross-Sectional Nanoindentation

2011 ◽  
Vol 339 (7-8) ◽  
pp. 443-457 ◽  
Author(s):  
Eric Felder ◽  
Sébastien Roy ◽  
Evelyne Darque-Ceretti
Keyword(s):  
Thin Film ◽  
Cross Sectional

Transistors with a Profiled Active Layer Made by Hot-Wire Cvd

1998 ◽  
Vol 507 ◽  
Author(s):  
H. Meiling ◽  
A.M. Brockhoff ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Hot Wire ◽  
Semiconductor Interface ◽  
Cross Sectional ◽  
Silicon Matrix ◽  
Bias Stress ◽  
Silicon Devices ◽  
Transmission Electron ◽  
Conducting Research

ABSTRACTIn order to obtain stable thin-film silicon devices we are conducting research on the implementation of hot-wire CVD amorphous and polycrystalline silicon in thin-film transistors, TFFs. We present results on TFTs with a profiled active layer (deposited at ≥9 Å/s), and correlate the electrical properties with the structure of the silicon matrix at the insulator/semiconductor interface, as determined with cross-sectional transmission electron microscopy. Devices prepared with an appropriate H2 dilution of SiH4 show cone-shaped crystalline inclusions. These crystals start at the interface in some cases, and in others exhibit an 80nm incubation layer prior to nucleation. The crystals in the TFTs with the incubation layer are not cone-shaped, but are rounded off. The hot-wire CVD deposited devices exhibit a high fieldeffect mobility up to 1.5 cm2V−1s−l. Also, these devices have superior stability upon continuous gate bias stress, as compared to conventional glow-discharge α-Si:H TFTs. We ascribe this to a combination of enhanced structural order of the silicon and a low hydrogen content.

scholarly journals Low Temperature Sub-micron Gap Thin-film Silicon Resonators on Glass Substrate

2014 ◽  
Vol 87 ◽  
pp. 1418-1421
Author(s):  
J. Mouro ◽  
A. Gualdino ◽  
L. Teagno ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Glass Substrate ◽  
Thin Film Silicon ◽  
Silicon Resonators

Geometrical scale dependency of thin film solid oxide fuel cells

2020 ◽  
Vol 34 (07n09) ◽  
pp. 2040038
Author(s):  
Yeageun Lee ◽  
Jianhuang Zeng ◽  
Chunhua Zheng ◽  
Wonjong Yu ◽  
Suk Won Cha ◽  
...  
Keyword(s):  
Thin Film ◽  
Fuel Cells ◽  
Solid Oxide Fuel Cells ◽  
Power Density ◽  
Solid Oxide ◽  
Scale Dependency ◽  
Oxide Fuel ◽  
Cross Sectional ◽  
Ohmic Losses ◽  
Geometrical Scale

To study the geometrical scale dependency of thin film solid oxide fuel cells (SOFCs), we fabricated three thin films SOFCs which have the same cross-sectional structure but different electrode areas of 1 mm2, 4 mm2 and 9 mm2. Since the activation and ohmic losses of SOFCs depend on their active region, we examined the variations of the power density of the cells with a Pt/YSZ/Pt structure and simulated the power density variations using the COMSOL software package.

Sign in / Sign up

Export Citation Format

Share Document