scholarly journals 2D AND 3D DOPING OF SILICON MEMS STRUCTURES USING PHOSPHORUS-DOPED POLYSILICON AS A DOPANT SOURCE

2018 ◽  
Author(s):  
P.J. Newby ◽  
K. Zandi ◽  
K. Cute ◽  
J.P. Richard ◽  
K.A. Belarbi
Keyword(s):  
2D And 3D ◽  
Phosphorus Doped ◽  
Dopant Source

Analysis of Phosphorus-Doped Silicon Oxide Layers Deposited by Means of PECVD as a Dopant Source in Diffusion Processes

2012 ◽  
Vol 2 (4) ◽  
pp. 450-456 ◽  
Author(s):  
A. Fallisch ◽  
D. Wagenmann ◽  
R. Keding ◽  
D. Trogus ◽  
M. Hofmann ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Diffusion Processes ◽  
Oxide Layers ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Dopant Source

Effect of Phosphorus Doping on the Young’s Modulus and Stress of Polysilicon Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Elena Bassiachvili ◽  
Patricia Nieva
Keyword(s):  
Thin Film ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Average Stress ◽  
Phosphorus Concentration ◽  
Phosphorus Doping ◽  
On Chip ◽  
Deformation Tests ◽  
Phosphorus Doped ◽  
Dopant Source

ABSTRACTOn-chip MEMS (Micro Electromechanical Systems) characterization devices have been used to extract the Young’s modulus and average stress of polysilicon doped with phosphorus using thermal diffusion from a spin-on-dopant source. A customized fabrication process was developed and the devices were fabricated and tested. Resonant and static deformation tests were performed using microbridges. Information gathered from these experiments was combined to extract the Young’s modulus and residual stress of the thin film. Several doping concentrations, from undoped to 2.99×1020 phosphorus atoms/cm3 (4.148×10-4 Ω/cm), have been studied and it has been concluded that the Young’s modulus of phosphorus doped polysilicon with a chemical phosphorus concentration of 1.96×1020 atoms/cm3 (4.572×10-4 Ω/cm) increases by approximately 50GPa and the average stress of polysilicon with a phosphorus concentration of 2.99×1020 atoms/cm3 (4.148×10-4 Ω/cm) becomes more tensile by approximately 63 MPa relative to undoped specimens.

Analysis of 2D and 3D defects associated with precipitation of Cu in silicon

1991 ◽  
Vol 49 ◽  
pp. 870-871
Author(s):  
P.M. Rice ◽  
MJ. Kim ◽  
R.W. Carpenter
Keyword(s):  
Colony Growth ◽  
Dark Field ◽  
Dark Side ◽  
Silicide Phase ◽  
Strain Fields ◽  
Near Surface ◽  
Unknown Composition ◽  
Secondary Precipitates ◽  
20 Nm ◽  
2D And 3D

Extrinsic gettering of Cu on near-surface dislocations in Si has been the topic of recent investigation. It was shown that the Cu precipitated hetergeneously on dislocations as Cu silicide along with voids, and also with a secondary planar precipitate of unknown composition. Here we report the results of investigations of the sense of the strain fields about the large (~100 nm) silicide precipitates, and further analysis of the small (~10-20 nm) planar precipitates.Numerous dark field images were analyzed in accordance with Ashby and Brown's criteria for determining the sense of the strain fields about precipitates. While the situation is complicated by the presence of dislocations and secondary precipitates, micrographs like those shown in Fig. 1(a) and 1(b) tend to show anomalously wide strain fields with the dark side on the side of negative g, indicating the strain fields about the silicide precipitates are vacancy in nature. This is in conflict with information reported on the η'' phase (the Cu silicide phase presumed to precipitate within the bulk) whose interstitial strain field is considered responsible for the interstitial Si atoms which cause the bounding dislocation to expand during star colony growth.

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

Covalent organic frameworks: an ideal platform for designing ordered materials and advanced applications

2021 ◽  
Author(s):  
Ruoyang Liu ◽  
Ke Tian Tan ◽  
Yifan Gong ◽  
Yongzhi Chen ◽  
Zhuoer Li ◽  
...  
Keyword(s):  
Covalent Organic Frameworks ◽  
2D And 3D ◽  
Advanced Applications

Covalent organic frameworks offer a molecular platform for integrating organic units into periodically ordered yet extended 2D and 3D polymers to create topologically well-defined polygonal lattices and built-in discrete micropores and/or mesopores.

Evaluating Alternate Visualization Methods for Microsurgery: 2D and 3D Optical Microscopes and Flat-Panel Displays

2012 ◽  
Author(s):  
Michael Sackllah ◽  
Denny Yu ◽  
Charles Woolley ◽  
Steven Kasten ◽  
Thomas J. Armstrong
Keyword(s):  
Flat Panel Displays ◽  
Flat Panel ◽  
2D And 3D

Alternative 2D and 3D Visualization Methods for Microsurgery: Posture, Performance, and Discomfort Analysis

2011 ◽  
Author(s):  
Denny Yu ◽  
Michael Sackllah ◽  
Charles Woolley ◽  
Steven Kasten ◽  
Thomas J. Armstrong
Keyword(s):  
3D Visualization ◽  
2D And 3D
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