scholarly journals LONG-TERM STABLE ION SENSITIVE FIELD EFFECT TRANSISTOR SENSORS BASED ON MICROFLUIDICS INDUCED TUNABLE GRAPHENE FILMS

2012 ◽  
Author(s):  
B. Zhang ◽  
T. Cui
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Films ◽  
Effect Transistor

scholarly journals The ion sensitive field effect transistor (ISFET) pH electrode: a new sensor for long term ambulatory pH monitoring.

Gut ◽  
1991 ◽  
Vol 32 (3) ◽  
pp. 240-245 ◽  
Author(s):  
P Duroux ◽  
C Emde ◽  
P Bauerfeind ◽  
C Francis ◽  
A Grisel ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Monitoring ◽  
Ambulatory Ph Monitoring ◽  
Effect Transistor ◽  
Ambulatory Ph ◽  
Ph Electrode

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

2012 ◽  
Vol 717-720 ◽  
pp. 1021-1024 ◽  
Author(s):  
Kevin Lawson ◽  
G. Alvarez ◽  
S. B. Bayne ◽  
Victor Veliadis ◽  
H.C. Ha ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Single Shot ◽  
Power Devices ◽  
Reliable Operation ◽  
Fault Handling ◽  
Blocking Voltage ◽  
Effect Transistor ◽  
Surge Current

A necessity for the successful commercialization of SiC power devices is their long term reliability under the switching conditions encountered in application. Normally-ON 1200 V SiC JFETs were stressed in hard-switching conditions to determine their fault handling capabilities. The hard-switching included single shot tests ranging from drain voltages of 100 V to 500 V and repetition rate tests at 1 Hz, 5 Hz, 10 Hz, and 100 Hz with peak currents exceeding 100 A (8 times the rated current at 250 W/cm22). The JFET conduction and blocking-voltage characteristics are unchanged after 4,000 pulsed and numerous single shot hard switching events proving the devices are reliable for handling high surge-current faults.

Long-term recording system based on field-effect transistor arrays for monitoring electrogenic cells in culture

1998 ◽  
Vol 13 (6) ◽  
pp. 613-618 ◽  
Author(s):  
Christoph Sprössler ◽  
Dirk Richter ◽  
Morgan Denyer ◽  
Andreas Offenhäusser
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Recording System ◽  
Cells In Culture ◽  
Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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