Evidence of Unacceptable Video Detector Performance for Dilemma Zone Protection

2008 ◽  
Vol 2080 (1) ◽  
pp. 100-110 ◽  
Author(s):  
Dan Middleton ◽  
Eun Sug Park ◽  
Hassan Charara ◽  
Ryan Longmire
Keyword(s):  
Detector Performance ◽  
Dilemma Zone ◽  
Video Detector

High-purity Ge x-ray detectors: Sensitivity factors and usefulness

1990 ◽  
Vol 48 (2) ◽  
pp. 548-548
Author(s):  
E. B. Steel
Keyword(s):  
High Purity ◽  
High Energy ◽  
Quantitative Chemical Analysis ◽  
Detector Performance ◽  
X Ray ◽  
Detector Sensitivity ◽  
Specimen Holder ◽  
Many Instruments ◽  
Charge Resolution ◽  
Sensitivity Factors

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.

Prospects of Time-Resolved Photon Emission as a Debug Tool

2002 ◽  
Author(s):  
Jim Vickers ◽  
Nader Pakdaman ◽  
Steven Kasapi
Keyword(s):  
Photon Emission ◽  
Photon Counting ◽  
Signal Propagation ◽  
General Function ◽  
Hot Electron ◽  
Detector Performance ◽  
Time Resolved ◽  
Switching Event ◽  
Emission System

Abstract Dynamic hot-electron emission using time-resolved photon counting can address the long-term failure analysis and debug requirements of the semiconductor industry's advanced devices. This article identifies the detector performance parameters and components that are required to scale and keep pace with the industry's requirements. It addresses the scalability of dynamic emission with the semiconductor advanced device roadmap. It is important to understand the limitations to determining that a switching event has occurred. The article explains the criteria for event detection, which is suitable for tracking signal propagation and looking for logic or other faults in which timing is not critical. It discusses conditions for event timing, whose goal is to determine accurately when a switching event has occurred, usually for speed path analysis. One of the uses of a dynamic emission system is to identify faults by studying the emission as a general function of time.

scholarly journals MoS2 Based Photodetectors: A Review

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2758
Author(s):  
Alberto Taffelli ◽  
Sandra Dirè ◽  
Alberto Quaranta ◽  
Lucio Pancheri
Keyword(s):  
Electric Fields ◽  
Spectral Range ◽  
Performance Metrics ◽  
Transition Metal Dichalcogenides ◽  
Visible Spectral Range ◽  
Detector Performance ◽  
Strong Light ◽  
Near Ultraviolet ◽  
Passivation Layers ◽  
Low Dimensional

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

Sign in / Sign up

Export Citation Format

Share Document