Focused Ion Beam Preparation and EFTEM/EELS Studies on Vanadium Nitride Thin Films

2005 ◽  
Vol 42 (4) ◽  
pp. 172-187 ◽  
Author(s):  
Michael Rogers ◽  
Gerald Kothleitner ◽  
Antje Berendes ◽  
Wolfgang Bock ◽  
Bernd O. Kolbesen
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vanadium Nitride

A combined SNMS and EFTEM/EELS study on focused ion beam prepared vanadium nitride thin films

2005 ◽  
Vol 252 (1) ◽  
pp. 66-76 ◽  
Author(s):  
Gerald Kothleitner ◽  
M. Rogers ◽  
A. Berendes ◽  
W. Bock ◽  
B.O. Kolbesen
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vanadium Nitride

Mechanical Properties of Electroplated Copper Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Film Thickness ◽  
Yield Stress ◽  
Laser Scanning ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Films ◽  
Electroplated Copper

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.

Effects of P Content on Morphology of Nanocrystals Induced by FIB Irradiation in Ni-P Amorphous Alloy

2006 ◽  
Vol 960 ◽  
Author(s):  
Koji Sato ◽  
Chiemi Ishiyama ◽  
Masato Sone ◽  
Yakichi Higo
Keyword(s):  
Thin Films ◽  
Amorphous Alloy ◽  
Crystallographic Orientation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Orientation Relationships ◽  
Beam Direction ◽  
Precipitation Distribution ◽  
P Content

ABSTRACTWe studied the effects of phosphorus (P) on Ni nanocrystalline morphology formed by focused ion beam (FIB) irradiation for Ni-P amorphous alloy thin films. The P content in the amorphous alloy was varied from 8 to 12 wt.%. The nanocrystals induced by the FIB irradiation for Ni-11.8, 8.9, 7.9 wt.% amorphous alloy had an f.c.c. structure and showed unique crystallographic orientation relationships to the geometry of the focused ion beam, that is, {111}f.c.c. parallel to the irradiated plane and <110>f.c.c. parallel to the projected ion beam direction, respectively. The Ni nanocrystals precipitated like aggregates with decreasing of the P content. These results represent that the P content does not affect crystallographic orientation relationships, while influences the precipitation distribution of Ni nanocrystals generated by the FIB irradiation.

Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning

2012 ◽  
Vol 717-720 ◽  
pp. 889-892 ◽  
Author(s):  
Hamidreza Zamani ◽  
Seung Wan Lee ◽  
Amir Avishai ◽  
Christian A. Zorman ◽  
R. Mohan Sankaran ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Quality ◽  
Nanoscale Patterning ◽  
Different Types ◽  
Thin Membranes ◽  
Amorphous Sic ◽  
Nanoscale Features

We report on experimental explorations of using focused ion beam (FIB) nanomachining of different types of silicon carbide (SiC) thin membranes, for making robust, high-quality stencil masks for new emerging options of nanoscale patterning. Using thin films and membranes in polycrystalline SiC (poly-SiC), 3C-SiC, and amorphous SiC (a-SiC) with thicknesses in the range of t~250nm−1.6μm, we have prototyped a series of stencil masks, with nanoscale features routinely down to ~100nm.

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

2012 ◽  
Vol 520 (6) ◽  
pp. 2073-2076 ◽  
Author(s):  
Xu Song ◽  
Kong Boon Yeap ◽  
Jing Zhu ◽  
Jonathan Belnoue ◽  
Marco Sebastiani ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Residual Stress Measurement ◽  
Focused Ion Beam Milling

scholarly journals Preventing Agglomeration of CuO-Based Oxygen Carriers for Chemical Looping Applications

2021 ◽  
Author(s):  
Qasim Imtiaz ◽  
Andac Armutlulu ◽  
Felix Donat ◽  
Muhammad Awais Naeem ◽  
Christoph Müller
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Pechini Method ◽  
Ion Beam ◽  
Oxygen Carrier ◽  
Structural Instability ◽  
Chemical Looping ◽  
Oxygen Carriers ◽  
Promising Alternative ◽  
Main Challenge

Chemical looping combustion (CLC) is a promising alternative to the conventional combustion-based, fossil fuel conversion processes. In CLC, a solid oxygen carrier is used to transfer oxygen from air to a carbonaceous fuel. This indirect combustion route allows for effective CO<sub>2</sub> capture since a sequestrable stream of CO<sub>2 </sub>is inherently produced without any need for energy-intensive CO<sub>2</sub> separation. From a thermodynamic point of view, CuO is arguably one of the most promising oxygen carrier candidates for CLC. However, the main challenge associated with the use of CuO for CLC is its structural instability at the typical operating temperatures of chemical looping processes, leading to severe thermal sintering and agglomeration. To minimize irreversible microstructural changes during CLC operation, CuO is commonly stabilized by a high Tammann temperature ceramic, e.g., Al<sub>2</sub>O<sub>3</sub>, MgAl<sub>2</sub>O<sub>4</sub>, etc. However, it has been observed that a high Tammann temperature support does not always provide a high resistance to agglomeration. This work aims at identifying descriptors that can be used to characterize accurately the agglomeration tendency of CuO-based oxygen carriers. CuO-based oxygen carriers supported on different metal oxides were synthesized using a Pechini method. The cyclic redox stability and agglomeration tendency of the synthesized materials was evaluated using both a thermo-gravimetric analyser and a lab-scale fluidized bed reactor at 900 °C using 10 vol. % H<sub>2</sub> in N<sub>2</sub> as the fuel and air for re-oxidation. In order to study the diffusion of Cu(O) during redox reactions, well-defined model surfaces comprising thin films of Cu/CuO and two different supports, viz. ZrO<sub>2</sub> or MgO, were prepared via magnetron sputtering. Energy dispersive X-ray (EDX) spectroscopy on focused ion beam (FIB)-cut cross-sections of the thin films revealed that Cu atoms have a tendency to diffuse outward through most of the films of the support material under redox conditions. The support that inhibits the outward movement of Cu(O), i.e. avoiding the presence of low melting Cu on the oxygen carrier surface, is found to provide the highest agglomeration resistance. The support MgO was found to possesses such diffusion characteristics.

Development of a Characterization Workflow for Reliable Porous Copper Films using SEM-FIB Tomography and Advanced Image Analysis

2019 ◽  
Author(s):  
Andi Wijaya ◽  
Jördis Rosc ◽  
Bernhard Sartory ◽  
Roland Brunner ◽  
Barbara Eichinger ◽  
...  
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Evaluation Method ◽  
Ion Beam ◽  
Image Data ◽  
Design Guidelines ◽  
Porous Metals ◽  
Direct Evaluation ◽  
Porous Copper ◽  
Set Up

Abstract The development of a characterization workflow for reliable pore characterization of porous metals especially for microelectronics applications is very important. This will help to provide design guidelines for the production and for the improved reliability of the devices. In this paper, we set up a workflow to accurately evaluate the porosity, of four different porous copper materials. The porous thin films are fabricated by using stencil printing. Within the workflow we use for the measurement non-destructive micro-X-ray computed tomography (ƒÝ-XCT) and destructive high-resolution scanning electron focused ion beam nano-tomography (nano-FIB tomography). The latter will be also used to calibrate the threshold for the ƒÝ-XCT image data, since a direct evaluation of the porosity from the non-destructively obtained ƒÝ-XCT image data due to resolution and contrast is not possible. Therefore, we develop an indirect histogram based evaluation method to get the porosity of the porous copper thin films. We validate and discuss the obtained results with respect to further studies.

Morphological and Electrical Properties of Silver Thin Films Sputter Deposited on LTCC Substrates

2008 ◽  
Vol 5 (4) ◽  
pp. 169-173 ◽  
Author(s):  
A. Bittner ◽  
T. Bohnenberger ◽  
R. Engel ◽  
H. Seidel ◽  
U. Schmid
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Plasma Power ◽  
X Ray Diffraction ◽  
Deposition Parameters ◽  
Mean Grain Size ◽  
Agglomeration Effects ◽  
Ag Deposition ◽  
Sputter Deposited

Screen printed noble metal thick films are commonly used as metallization on LTCC (low temperature cofired ceramics) substrates. When, however, geometries with a lateral resolution below 20 μm are needed for the realization of devices, alternative techniques are needed, and they are provided by standard thin film technology. To minimize conduction losses, silver (Ag) is favored due to a low bulk resistivity. To evaluate the potential of Ag as metallization, thin films are sputter deposited on glass and LTCC substrates under varying conditions (i.e., plasma power) with different film thicknesses ranging up to 1.75 μm. The microstructure of the Ag films is analyzed applying techniques such as scanning electron microscopy, focused ion beam, and x-ray diffraction. With the latter approach, a mean grain size of about 33 nm is measured independent of plasma power used for Ag deposition. In contrast, the texture strongly varies with deposition parameters resulting in an enhanced generation of (111) planes at higher plasma powers due to an increased adatom mobility. Furthermore, a higher degree in (111) orientation results in a lower resistivity of the Ag films. When the Ag films are postdeposition annealed at 500°C, the resistivity decreases by a factor of 2 compared with the “as deposited” state due to grain growth. Further, sublimation and agglomeration effects dominate leading to an increase in surface roughness and resistivity above average.

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