Applications of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy to thin oxide films and interfaces

2010 ◽  
Vol 101 (1) ◽  
pp. 21-26 ◽  
Author(s):  
Maria Varela ◽  
Jaume Gazquez ◽  
Andy R. Lupini ◽  
Julia T. Luck ◽  
Maria A. Torija ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Thin Oxide Films ◽  
Electron Energy Loss ◽  
Aberration Corrected

scholarly journals Synthesis of nanosized vanadium(v) oxide clusters below 10 nm

2019 ◽  
Vol 21 (37) ◽  
pp. 21104-21108 ◽  
Author(s):  
Maximilian Lasserus ◽  
Daniel Knez ◽  
Florian Lackner ◽  
Martin Schnedlitz ◽  
Roman Messner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Helium Droplets ◽  
Transmission Electron ◽  
Mean Diameter ◽  
Scanning Transmission ◽  
Electron Energy Loss

Vanadium oxide clusters with a mean diameter below 10 nm are created in helium droplets, and after deposition, studied by Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and UV-vis absorption spectroscopy.

Analysis of AlxGa1-xN nanowires through simulated methods of scanning transmission electron microscopy and electron energy-loss spectroscopy

2013 ◽  
Vol 6 (1) ◽  
Author(s):  
R. Kumar ◽  
P.J. Phillips ◽  
R.F. Klie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

AlxGa1-xN nanowires have promising applications in ultraviolet light emitting diodes (LEDs). However, these nanowires are not typical p-n junction semiconductors, but rather rely on varying concentrations of Al versus Ga to produce electron hole pairs. More information on the atomic structure is needed to better understand the properties of these nanowires. In this study, AlxGa1-xN nanowires were imaged using scanning transmission electron microscopy (STEM) and compared to computer simulated STEM images to obtain physical information on the nanowires. Electron energy-loss spectroscopy (EELS) and FEFF9 computer simulations were also performed to better understand the structural and chemical properties of the nanowires. Results from these simulations showed that changes in the chemical ordering of the nanowires were responsible for changes in intensity and resolution in the images. These intensity and resolution trends were not a result of interface effects. This will help to further characterize nanowires in the future.

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