High-Temperature Stress and Strain Partitioning in Duplex Stainless Steel

2002 ◽  
Vol 93 (3) ◽  
pp. 236-243 ◽  
Author(s):  
L. Duprez ◽  
B. C. De Cooman ◽  
N. Akdut
2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  

Alloy Digest ◽  
1993 ◽  
Vol 42 (11) ◽  

Abstract ZERON 100 is a super duplex stainless steel which is manufactured to give a guaranteed corrosion performance by using an equation to control the chemistry in those elements which will determine the corrosion resistance of the material. Major usages in seawater applications, particularly offshore oil gathering systems. This datasheet provides information on composition, hardness, and tensile properties as well as fracture toughness. It also includes information on low and high temperature performance as well as heat treating, machining, and joining. Filing Code: SS-555. Producer or source: Weir Material Services Ltd.


Alloy Digest ◽  
2015 ◽  
Vol 64 (5) ◽  

Abstract ATI 2102 is a lean austenitic/ferritic duplex stainless steel. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, and joining. Filing Code: SS-1207. Producer or source: Allegheny Ludlum.


Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.


2020 ◽  
Vol 16 (2) ◽  
pp. 18-23
Author(s):  
K. PRAVALLIKA ◽  
C. ARUNKUMAR ◽  
A. VIJAYKUMAR ◽  
R. BEENA ◽  
V. G. JAYALEKSHMI

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