Synthesis and Surface/Interfacial Properties of Novel Dialkyl Disulfonate Gemini Surfactants Derived from 1,3,5-triazine

2016 ◽  
Vol 53 (6) ◽  
pp. 595-600 ◽  
Author(s):  
Ruixia Niu ◽  
Chao Wang ◽  
Hua Song ◽  
Jingling Wang ◽  
Daqiang Wang ◽  
...  
Author(s):  
Tadashi Sugahara ◽  
Yuichiro Takamatsu ◽  
Masaaki Akamatsu ◽  
Kenichi Sakai ◽  
Masahiko Abe ◽  
...  

SPE Journal ◽  
2013 ◽  
Vol 18 (05) ◽  
pp. 829-840 ◽  
Author(s):  
Bo Gao ◽  
Mukul M. Sharma

Summary A new family of anionic surfactants that has great potential for enhanced-oil-recovery (EOR) applications was synthesized and characterized in our laboratory. The unique and versatile structure of these surfactants has endowed them with properties that are attractive for EOR. A detailed experimental study was carried out and is presented here on the oil/water and solid/water interfacial properties of seven novel molecules. The interfacial properties of this series of seven anionic surfactants with different lengths of hydrophobic tail and linking spacer group show systematic trends in interfacial tension (IFT) and static adsorption density with changes in solution conditions. These molecules showed excellent aqueous stability even in high-salinity and hard brines. Ultralow IFT (ULIFT) values were measured at low surfactant concentrations. The synthesized Gemini surfactants also showed lower maximal adsorption densities than the conventional single-chain surfactants. The results from this study showed the potential of using these surfactants at low concentrations and in harsh reservoir conditions.


Langmuir ◽  
2002 ◽  
Vol 18 (7) ◽  
pp. 2477-2482 ◽  
Author(s):  
Mariano J. L. Castro ◽  
José Kovensky ◽  
Alicia Fernández Cirelli

Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.


2018 ◽  
Vol 55 (4) ◽  
pp. 302-311
Author(s):  
Long Bai ◽  
Xiaochen Liu ◽  
Tiliu Jiao ◽  
Yong Wang ◽  
Yueqing Huo ◽  
...  

2019 ◽  
Vol 56 (4) ◽  
pp. 268-278 ◽  
Author(s):  
Dipak D. Pukale ◽  
Archana S. Bansode ◽  
Nilesh L. Jadhav ◽  
Dipak V. Pinjari ◽  
Rahul R. Kulkarni

Sign in / Sign up

Export Citation Format

Share Document