scholarly journals Map showing total thickness of the "Dakota Sandstone," Montana

1982 ◽  
Keyword(s):  
Total Thickness ◽  
Dakota Sandstone

Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

1987 ◽  
Vol 45 ◽  
pp. 54-55
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Transport Current ◽  
Total Thickness ◽  
New Class ◽  
Ceramic Superconductors ◽  
Current Densities ◽  
Group Ii ◽  
Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

scholarly journals Forced Fold Amplitude and Sill Thickness Constrained by Wireline and 3-D Seismic Data Suggest an Elastic Magma-Induced Deformation in Tarim Basin, NW China

Minerals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 293
Author(s):  
Wei Tian ◽  
Xiaomin Li ◽  
Lei Wang
Keyword(s):  
Tarim Basin ◽  
Seismic Data ◽  
Inelastic Deformation ◽  
Northwest China ◽  
Well Log ◽  
Total Thickness ◽  
Nw China ◽  
Seismic Method ◽  
Two Parameters ◽  
Outer Area

Disparities between fold amplitude (A) and intrusion thickness (Hsill) are critical in identifying elastic or inelastic deformation in a forced fold. However, accurate measurements of these two parameters are challenging because of the limit in separability and detectability of the seismic data. We combined wireline data and 3-D seismic data from the TZ-47 exploring area in the Tarim Basin, Northwest China, to accurately constrain the fold amplitude and total thickness of sills that induced roof uplift in the terrain. Results from the measurement show that the forced fold amplitude is 155.0 m. After decompaction, the original forced fold amplitude in the area penetrated by the well T47 ranged from 159.9 to 225.8 m, which overlaps the total thickness of the stack of sills recovered by seismic method (171.4 m) and well log method (181.0 m). Therefore, the fold amplitude at T47 area is likely to be elastic. In contrast, the outer area of the TZ-47 forced fold is characterized by shear-style deformation, indicating inelastic deformation at the marginal area. It is suggested that interbedded limestone layers would play an important role in strengthening the roof layers, preventing inelastic deformation during the emplacement of intrusive magma.

scholarly journals Genomic Dissection of Peduncle Morphology in Barley through Nested Association Mapping

Plants ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 10
Author(s):  
Sebastian Zahn ◽  
Thomas Schmutzer ◽  
Klaus Pillen ◽  
Andreas Maurer
Keyword(s):  
Quantitative Trait Loci ◽  
Association Mapping ◽  
Cross Section ◽  
Quantitative Trait ◽  
Spring Barley ◽  
Raw Material ◽  
Total Thickness ◽  
Nested Association Mapping ◽  
Elite Cultivar ◽  
Major Qtl

Straw biomass and stability are crucial for stable yields. Moreover, straw harbors the potential to serve as a valuable raw material for bio-economic processes. The peduncle is the top part of the last shoot internode and carries the spike. This study investigates the genetic control of barley peduncle morphology. Therefore, 1411 BC1S3 lines of the nested association mapping (NAM) population “Halle Exotic Barley 25” (HEB-25), generated by crossing the spring barley elite cultivar Barke with an assortment of 25 exotic barley accessions, were used. Applying 50k Illumina Infinium iSelect SNP genotyping yielded new insights and a better understanding of the quantitative trait loci (QTL) involved in controlling the peduncle diameter traits, we found the total thickness of peduncle tissues and the area of the peduncle cross-section. We identified three major QTL regions on chromosomes 2H and 3H mainly impacting the traits. Remarkably, the exotic allele at the QTL on chromosome 3H improved all three traits investigated in this work. Introgressing this QTL in elite cultivars might facilitate to adjust peduncle morphology for improved plant stability or enlarged straw biomass production independent of flowering time and without detrimental effects on grain yield.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

scholarly journals Chemical profiling and total thickness-excised wound-healing activity of Pistacia lentiscus L. fruits growing in Algeria

2016 ◽  
Vol 2 (1) ◽  
pp. 1182611 ◽  
Author(s):  
Ahmed Boukeloua ◽  
Abdelmalik Belkhiri ◽  
Mustafa Abdullah Yilmaz ◽  
Hamdi Temel ◽  
Sabrina Sabatini
Keyword(s):  
Wound Healing ◽  
Pistacia Lentiscus ◽  
Total Thickness ◽  
Chemical Profiling ◽  
Wound Healing Activity

Vibration Analysis of ID Slicing Process and Wafer Measurement

2006 ◽  
Vol 315-316 ◽  
pp. 641-645 ◽  
Author(s):  
Xin Wei ◽  
Rui Wei Huang ◽  
Shao Hui Lai ◽  
Z.H. Xie
Keyword(s):  
Surface Roughness ◽  
Power Spectrum ◽  
Vibration Analysis ◽  
Machining Accuracy ◽  
Radial Vibration ◽  
Total Thickness ◽  
Axial Vibration ◽  
Vibration Signals ◽  
Measurement And Analysis ◽  
Inner Diameter

ID (inner-diameter) slicing is widely used in cutting ingots currently. In this paper, the deflection (axial vibration) and vibration (radial vibration) signals in different slicing conditions of the silicon wafers were measured online and analyzed. The effects of the vibration signals on the machining accuracy and surface roughness of sliced wafers were investigated based on the measurement and analysis of the surface roughness, warpage and TTV (total thickness vibration) of the sliced wafers. The results show that the changes of surface roughness, warpage and TTV of the sliced wafers exhibit approximately consistence with the changes of the power spectrums of the acquired vibration signals in different working stage of the blade. The vibration and deflection signals can give evidence of the changes in the cutting forces and blade performance during slicing. The power spectrum of the signals is useful for monitoring the blade wear and tension condition and predicting the surface quality and machining accuracy of the sliced wafers.

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