scholarly journals Novel Applications of Field Emitter Arrays ∼Towards Electron Devices under Harsh Environments and Light Sources∼

2017 ◽  
Vol 60 (2) ◽  
pp. 55-63 ◽  
Author(s):  
Yasuhito GOTOH
Keyword(s):  
Harsh Environments ◽  
Light Sources ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Electron Devices ◽  
Novel Applications

Efficient Carbon Nanotube Field Emitter using Electrospun Carbon Nanofibers as a Flexible Electrode

2009 ◽  
Vol 1173 ◽  
Author(s):  
Hidetoshi Matsumoto ◽  
Kenichi Suzuki ◽  
Kazuma Tsuboi ◽  
Mie Minagawa ◽  
Akihiko Tanioka ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Carbon Fibers ◽  
Current Density ◽  
Chemical Vapor ◽  
Light Sources ◽  
Flexible Electrode ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Thin Carbon ◽  
Cnt Field Emitter

AbstractThermal-stable, conductive, and flexible carbon fabric (CF), which is composed of thin carbon fibers prepared by electrospinning, was used for the substrate of carbon nanotube (CNT) field emitter arrays. The field emitter arrays were prepared by chemical vapor deposition (CVD). The current density-electric field characteristics revealed that the CNT field emitter arrays on CF produced a higher current density at a lower turn-on voltage compared to ones on a Si substrate. This emitter integrated with a gate electrode based on hierarchy-structured carbon materials, CNTs on CF, can be used for light sources, displays, and other electronic devices.

Stable Emission Characteristics of Low Work Function Amorphous Carbon Coated Transfer Mold Nickel Field Emitter Arrays in Harsh Environment

2011 ◽  
Vol 222 ◽  
pp. 138-141
Author(s):  
Masayuki Nakamoto ◽  
Jong Hyun Moon
Keyword(s):  
Work Function ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Oxygen Radical ◽  
Harsh Environments ◽  
Satellite Orbits ◽  
Emission Characteristics ◽  
Field Emitter ◽  
Radical Treatment ◽  
Field Emitter Arrays

Low work function amorphous carbon Transfer Mold field emitter arrays (a-C-FEAs) have been fabricated by combining the Transfer Mold emitter fabrication method and the emitter material coating method to realize stable vacuum nanoelectronic devices in harsh environments of aerospace. The emitter tips of a-C-FEAs are extremely sharpened to 26.7-30.7 nm of tip radii. Work function of a-C-FEAs was as low as 3.6 eV compared with those of conventional emitter materials such as carbon nanotube of 5.0 eV. Oxygen radical flux intensity of 1015 atoms/cm2•sec was used for the evaluation of field emission characteristics, whose value is 107-108 times higher than those of 107-108 atoms/cm2•sec in aerospace of satellite orbits. As the oxygen radical treatment time increased, turn-on fields of Ni-FEAs exhibited the 2.2 times degradation from 14.9 V/µm to 32.7 V/µm. Those of a-C-FEAs have been keeping almost the same value of 20.8-23.7 V/µm after oxygen radical treatment. The a-C-FEAs exhibit stable field emission characteristics in harsh environments.

Optically stimulated picosecond field emission pulses from gated p-silicon field emitter arrays

2007 ◽  
Vol 90 (8) ◽  
pp. 083506 ◽  
Author(s):  
Chin-Jen Chiang ◽  
Kendrick X. Liu ◽  
Jonathan P. Heritage
Keyword(s):  
Field Emission ◽  
Field Emitter ◽  
Field Emitter Arrays

Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays

1995 ◽  
Vol 34 (Part 1, No. 12B) ◽  
pp. 6926-6931 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Tzu-Kun Ku ◽  
Biing-Bang Hsieh ◽  
Sheng-Hsiung Chen ◽  
Shye-Yuh Leu ◽  
...  
Keyword(s):  
Field Emitter ◽  
Field Emitter Arrays ◽  
Fabrication And Characterization
Sign in / Sign up

Export Citation Format

Share Document