scholarly journals Characterization of Carbon Thin Films Prepared by High Power Impulse Magnetron Sputtering

2017 ◽  
Vol 60 (9) ◽  
pp. 341-345
Author(s):  
Norio NAWACHI ◽  
Koichi ITOH ◽  
Yosuke ISAGI ◽  
Yoshiaki YOSHIDA ◽  
Keishi OKAMOTO ◽  
...  
2016 ◽  
Vol 881 ◽  
pp. 471-474 ◽  
Author(s):  
D.L.C. Silva ◽  
L.R.P Kassab ◽  
J.R. Martinelli ◽  
A.D. Santos ◽  
M.F. Pillis

Carbon thin films were produced by the magnetron sputtering technique. The deposition of the carbon films was performed on Co buffer-layers previously deposited on c-plane (0001) sapphire substrates. The samples were thermally treated under vacuum conditions and characterized by Raman spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD peak related to the carbon film was observed and the Raman spectroscopy indicated a good degree of crystallinity of the carbon film.


2017 ◽  
Vol 72 ◽  
pp. 71-76 ◽  
Author(s):  
A. Wiatrowski ◽  
W. Kijaszek ◽  
W.M. Posadowski ◽  
W. Oleszkiewicz ◽  
J. Jadczak ◽  
...  

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.


2011 ◽  
Vol 257 (15) ◽  
pp. 6445-6450 ◽  
Author(s):  
K. Siraj ◽  
M. Khaleeq-ur-Rahman ◽  
M.S. Rafique ◽  
M.Z. Munawar ◽  
S. Naseem ◽  
...  

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