scholarly journals Measurement of Silane Concentration in Silane-Hydrogen Gas Mixtures Using a Quartz Friction Pressure Gauge at Low Pressures and Low Silane Concentrations

2015 ◽  
Vol 58 (5) ◽  
pp. 181-184
Author(s):  
Atsushi SUZUKI ◽  
Hisao HOJO ◽  
Takichi KOBAYASHI
Keyword(s):  
Pressure Gauge ◽  
Gas Mixtures ◽  
Hydrogen Gas ◽  
Friction Pressure ◽  
Low Pressures ◽  
Silane Concentration

Influence of Electrode Argon-Hydrogen Co-Injection on Carbon Content in a Alternating Current Ladle Furnace

2011 ◽  
Vol 239-242 ◽  
pp. 2361-2364
Author(s):  
Dong Ping Zhan ◽  
Hui Shu Zhang ◽  
Zhou Hua Jiang ◽  
Wei Gong ◽  
Zhao Ping Chen
Keyword(s):  
Reaction Rate ◽  
Local Equilibrium ◽  
Low Carbon Steel ◽  
Alternating Current ◽  
Gas Mixtures ◽  
Electric Arc ◽  
Hydrogen Gas ◽  
Ladle Furnace ◽  
Low Carbon ◽  
Decarburization Rate

About 80 kg low carbon steel was refined in a multifunction ladle furnace (AC-LF) with alternating current supplying. The argon-hydrogen gas mixtures were injected into the electric arc zone through one hollow graphite electrode. The flow rate of the gas mixtures was 3 m3/h. Results of the tests and the calculation based on the plasma local equilibrium thermodynamics and metallurgical thermodynamics theories show that, when the argon-hydrogen gas mixtures are injected into the electric arc zone, the carburetion rate is 4.7×10-6per minute for the steel heated by conventional AC-LF, which is 1.26 and 1.51 times of the heats blown 90%Ar-10%H2and 80%Ar-20%H2, respectively. The carburetion rate is reduced by 20% at least when argon-hydrogen gas mixtures are blown into the furnace. When H2content in the gas mixtures reached 20% from 0, the decarburization rate increased but the total reaction rate decreases by 1.59×10-6per minute.

Polarity Control of CVD Grown 3C-SiC on Si(111)

2011 ◽  
Vol 679-680 ◽  
pp. 91-94
Author(s):  
Jörg Pezoldt ◽  
Bernd Schröter
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogen Gas ◽  
Gas Mixture ◽  
Surface Polarity ◽  
Polar Material ◽  
Face Surface ◽  
First Case ◽  
Low Pressures

XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted in hydrogen at atmospheric pressure in a rapid thermal chemical vapour deposition reactor and the crystallographic polarity of 3C-SiC(111) formed in an ethene hydrogen gas mixture at low pressures. In the first case C-face polar material was formed, whereas in the second case the grown expitaxial layer exhibits Si-face surface polarity.

Morphology of Diamond Films Produced by ECR-PACVD

1992 ◽  
Vol 280 ◽  
Author(s):  
S. Jin ◽  
T. D. Moustakas
Keyword(s):  
Growth Rate ◽  
Temperature Dependence ◽  
Hydrogen Abstraction ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Cubic Crystals ◽  
Surface Morphologies ◽  
Low Pressures ◽  
Substrate Temperatures ◽  
Rate Controlling Step

ABSTRACTDiamond films were produced at a relatively low pressures (<1 Torr) by the ECR-PACVD method of gas mixtures containing CO (5%), H2 (95%) and traces of oxygen at substrate temperatures from ambient (no intentional heating) to 1050°C. Faceted surface morphologies were observed even at the lowest temperature of growth. The microstructure is dominated by octahedral crystals below 600°C, by cubic crystals at 800–900°C, and by multiply twined (111) crystals at temperatures higher than 950°C. The weak temperature dependence of the growth rate is consistent with hydrogen abstraction from the growing surface being the rate controlling step.

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