Chemical Structural Analysis of Ion-Beam Exposed Polyimide Films by Means of X-Ray Photoelectron Spectroscopy.

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 187-189
Author(s):  
Lulu ZHANG ◽  
Takeshi KAWABATA ◽  
Kazumasa TAKATA ◽  
Toshiaki YASUI ◽  
Hirokazu TAHARA ◽  
...  
CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.


2019 ◽  
Vol 60 (8) ◽  
pp. 1707-1710 ◽  
Author(s):  
Patrícia S. Sato ◽  
Toshiki Watanabe ◽  
Hirotaka Maeda ◽  
Akiko Obata ◽  
Toshihiro Kasuga

1999 ◽  
Vol 5 (S2) ◽  
pp. 10-11
Author(s):  
J.R. Phillips ◽  
D.P. Griffis ◽  
P.E. Russell

The Analytical Instrumentation Facility (AIF) is a laboratory composed of scientists and engineers specializing in the development and application of advanced techniques for materials characterization (http://spm.aif.ncsu.edu/aif/index.html)http://www.nice.org.uk/page.aspx?o=43210. AIF facilities include an extensive collection of analytical instrumentation utilized in teaching, research, and in support of academic and industrial programs. General forms of analysis include: electron, ion, and photon microscopies, surface science and analysis, and scanned probe microscopies. An abbreviated listing of AIF capabilities follows: metallography/sample preparation, optical microscopy, X-ray Diffraction (XRD), X-ray Fluorescence (XRF), Secondary Ion Mass Spectroscopy (SIMS), Secondary Electron Microscopy (SEM), Scanned Probe Microscopy (SPM), Micro-Raman Spectroscopy, Focused Ion Beam Micro-machining (FIBM), Auger Electron Spectroscopy (AES), and X-Ray Photoelectron Spectroscopy (XPS or ESCA).AIF is a resource utilized not only by those within NC State requiring analytical services, but also by a large number of North Carolina non-profit and industrial organizations as well as the Materials Community at large.


1989 ◽  
Vol 154 ◽  
Author(s):  
William C. Stewart ◽  
Jihperng Leu ◽  
Klavs F. Jensen

AbstractWe describe infrared and x-ray photoelectron spectroscopy studies of the interfaces formed when the PMDA/ODA polyamic acid is imidized on gold, chromium, and copper. Polyimide films ranging from 34 Å to 1328 Å are analyzed as part of these studies. The IR and XPS results indicate that the gold interacts very little with the polyimide, while copper produces significant changes in the IR and XPS spectra. At elevated cure temperatures passivated chromium also reacts with the polyimide. In structures with chromium and copper, the thermal stability of the polyimide at the interface is reduced from that of bulk polyimide. The data demonstrate that the metals interact with the polymer structure at the point where ring closure occurs to form the polyimide from polyarnic acid.


2002 ◽  
Vol 743 ◽  
Author(s):  
Eugen M. Trifan ◽  
David C. Ingram

ABSTRACTAn innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.


Carbon ◽  
2009 ◽  
Vol 47 (4) ◽  
pp. 1208
Author(s):  
Susumu Takabayashi ◽  
Keishi Okamoto ◽  
Tatsuyuki Nakatani ◽  
Hiroyuki Sakaue ◽  
Takayuki Takahagi

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