scholarly journals Growth of Diamond Thin Films and Characterization of Acoustic Properties. (1).

Shinku ◽  
1994 ◽  
Vol 37 (3) ◽  
pp. 211-213
Author(s):  
Kazuhiko KOBAYASHI ◽  
Kenichi ISHIGURO ◽  
Hiroyuki OBARA ◽  
Toshihiro KOJIMA ◽  
Takuro KOIKE
Keyword(s):  
Thin Films ◽  
Acoustic Properties ◽  
Diamond Thin Films

scholarly journals Growth of Diamond Thin Films and Characterization of Acoustic Properties. (2).

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 216-219
Author(s):  
Kazuhiko KOBAYASHI ◽  
Kunihito IWASHITA ◽  
Masatoshi NOGUCHI ◽  
Takuro KOIKE
Keyword(s):  
Thin Films ◽  
Acoustic Properties ◽  
Diamond Thin Films

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Characterization of bias enhanced MWCVD diamond thin films

1996 ◽  
Vol 29 (1-3) ◽  
pp. 111-115 ◽  
Author(s):  
M.M.García Poza ◽  
M.Hernández Vélez ◽  
J. Jiménez ◽  
C. Gómez-Aleixandre ◽  
J.Sánchez Olías ◽  
...  
Keyword(s):  
Thin Films ◽  
Diamond Thin Films

Microfabrication and characterization of an array of diode electron source using amorphous diamond thin films

2000 ◽  
Vol 77 (18) ◽  
pp. 2921-2923 ◽  
Author(s):  
N. S. Xu ◽  
J. C. She ◽  
Jian Chen ◽  
S. Z. Deng ◽  
Jun Chen
Keyword(s):  
Thin Films ◽  
Electron Source ◽  
Diamond Thin Films

scholarly journals Thermal Characterization of Polycrystalline CVD Diamond Thin Films

2009 ◽  
Vol 1 (1) ◽  
pp. 609-613 ◽  
Author(s):  
S. Lani ◽  
C. Ataman ◽  
W. Noell ◽  
D. Briand ◽  
N. de Rooij
Keyword(s):  
Thin Films ◽  
Thermal Characterization ◽  
Cvd Diamond ◽  
Diamond Thin Films

High Frequency Ultrasound, a Tool for Elastic Properties Measurement of Thin Films Fabricated on Silicon

2011 ◽  
Vol 324 ◽  
pp. 277-281 ◽  
Author(s):  
Pierre Campistron ◽  
Julien Carlier ◽  
Nadine Saad ◽  
Jamin Gao ◽  
Malika Toubal ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Properties ◽  
High Frequency ◽  
Shear Waves ◽  
Thin Layers ◽  
Acoustic Properties ◽  
Frequency Range ◽  
Frequency Method ◽  
Longitudinal Waves

The main goal of this work is to develop an ultrasonic high frequency method for characterization of thin layers. The development of high frequency acoustic transducers for longitudinal waves and shear waves on silicon has enabeled the characterization of thin films deposited on this substrate. Three types of transducers have been achieved : (i) single crystal LiNbOSubscript text3 Y+163° for shear waves generation, and (ii) Y+36° for longitudinal waves, bonded and thinned on silicon substrate to achieve ultrasonic transducers in the frequency range 300-600 MHz ; (iii) thin films ZnO transducers were realized due to sputtering technologies working in the frequency range 1 GHz- 2.5 GHz. Using an inversion method and a network analyser which provide the scattering S11 parameter of the transducer versus the frequency we deduce the elastic properties of films deposited on the wafer surface. Thanks to these transducers the acoustic properties of thin films such as SU-8 based nanocomposites (doped with TiO2 , SrTiO3 or W nanoparticles) will be presented. In order to achieve mechanical impedance matching between silicon and water we control the mass of the embedded particles which provide a way to adjust the elastic properties of the characterized material. In another application an Indium metallic layer have been characterized in the high frequency range. We also use this method to characterize dielectric permittivity of the ZnO transducers.

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