Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.
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1987 ◽
2004 ◽
Vol 269
(2-4)
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pp. 181-186
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1994 ◽
Vol 136
(1-4)
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pp. 310-314
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2017 ◽
Vol 477
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pp. 135-138
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2003 ◽
Vol 103
(3)
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pp. 227-232
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