scholarly journals Optical and Structural Properties of Nickel Doped Zinc Oxide Grown by Metal Organic Chemical Vapor Deposition (MOCVD) at Different Reaction Chamber Conditions

2020 ◽  
Author(s):  
Zahra Manzoor ◽  
◽  
Vishal Saravade ◽  
Alexis Margaret Corda ◽  
Ian Ferguson ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Volatile, Monomeric, and Fluorine-Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

2010 ◽  
Vol 2010 (9) ◽  
pp. 1366-1372 ◽  
Author(s):  
Daniela Bekermann ◽  
Detlef Rogalla ◽  
Hans-Werner Becker ◽  
Manuela Winter ◽  
Roland A. Fischer ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity

Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 876 ◽  
Author(s):  
Jian Li ◽  
Ziling Wu ◽  
Yifeng Xu ◽  
Yanli Pei ◽  
Gang Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Operating Conditions ◽  
Organic Chemical ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The parameters for metal-organic chemical vapor deposition (MOCVD) processes significantly influence the properties of ZnO films, especially the flow stability of the chamber, which is caused by process parameters such as the shape of reaction chamber, the working pressure, the growth temperature, the susceptor rotational speed, the gas flow rate, and the nature of the carrier gas at inlet temperature. These parameters are the preconditions for the formation of high-quality film. Therefore, this study uses Ar as a carrier gas, diethylzinc (DEZn) as a Zn source, and H2O as an oxygen source and adopts the reaction mechanism calculated by quantum chemistry, which includes ten gas reactions and eight surface reactions. The process parameters of a specific reaction chamber model were analyzed based on the computational fluid dynamics method. This study also presents an accurate prediction of the flow regime in the reactor chamber under any operating conditions, without additional experiments, based on an analysis of a great quantity of simulation data. Such research is also significant for selecting the growth parameters relevant to production, providing a specific process growth window, narrowing the debugging scope, and providing a theoretical basis for the development of MOCVD equipment and process debugging.

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