scholarly journals XTe (X = Ge, Sn, Pb) Monolayers: Promising Thermoelectric Materials with Ultralow Lattice Thermal Conductivity and High-power Factor

2020 ◽  
Author(s):  
Dingbo Zhang ◽  
◽  
Song Hu ◽  
Yajing Sun ◽  
Xin Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Thermoelectric Materials ◽  
Lattice Thermal Conductivity ◽  
High Power Factor

Thermoelectric Performance of ZrNX (X = Cl, Br, I) Monolayers

2021 ◽  
Author(s):  
Wenwu Shi ◽  
Nina Ge ◽  
Xinzhong Wang ◽  
Zhiguo Wang
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Thermoelectric Materials ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
High Power Factor

Low thermal conductivity and high power factor are essential for the efficient thermoelectric materials. The lattice thermal conductivity can be reduced by reducing the dimension of materials, thus improving the...

A High Thermoelectric Performance ZT in p-Type LaSe2 Crystal

2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Phonon Transport ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
High Power Factor ◽  
P Type

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .

scholarly journals Ternary selenides A2Sb4Se8 (A = K, Rb and Cs) as an n-type thermoelectric material with high power factor and low lattice thermal conductivity: importance of the conformationally flexible Sb–Se–Se–Sb bridges

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14415-14421
Author(s):  
Changhoon Lee ◽  
Sujee Kim ◽  
Won-Joon Son ◽  
Ji-Hoon Shim ◽  
Myung-Hwan Whangbo
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Power Factor ◽  
High Power ◽  
High Performance ◽  
Lattice Thermal Conductivity ◽  
High Power Factor

The ternary selenides A2Sb4Se8 (A = K, Rb, Cs) are predicted to be a high-performance n-type thermoelectric material, and the conformationally-flexible Sb–Se(2)–Se(2)–Sb bridges are crucial in determining the thermoelectric properties of A2Sb4Se8.

Bi2PdO4: A Promising Thermoelectric Oxide with High Power Factor and Low Lattice Thermal Conductivity

2017 ◽  
Vol 29 (6) ◽  
pp. 2529-2534 ◽  
Author(s):  
Jiangang He ◽  
Shiqiang Hao ◽  
Yi Xia ◽  
S. Shahab Naghavi ◽  
Vidvuds Ozoliņš ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Oxide ◽  
High Power Factor

scholarly journals Hierarchically nanostructured thermoelectric materials: challenges and opportunities for improved power factors

2020 ◽  
Vol 93 (11) ◽  
Author(s):  
Neophytos Neophytou ◽  
Vassilios Vargiamidis ◽  
Samuel Foster ◽  
Patrizio Graziosi ◽  
Laura de Sousa Oliveira ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Thermoelectric Materials ◽  
Phonon Scattering ◽  
Electronic Device ◽  
Macro Scale ◽  
Challenges And Opportunities ◽  
Recent Developments ◽  
New Generation

Abstract The field of thermoelectric materials has undergone a revolutionary transformation over the last couple of decades as a result of the ability to nanostructure and synthesize myriads of materials and their alloys. The ZT figure of merit, which quantifies the performance of a thermoelectric material has more than doubled after decades of inactivity, reaching values larger than two, consistently across materials and temperatures. Central to this ZT improvement is the drastic reduction in the material thermal conductivity due to the scattering of phonons on the numerous interfaces, boundaries, dislocations, point defects, phases, etc., which are purposely included. In these new generation of nanostructured materials, phonon scattering centers of different sizes and geometrical configurations (atomic, nano- and macro-scale) are formed, which are able to scatter phonons of mean-free-paths across the spectrum. Beyond thermal conductivity reductions, ideas are beginning to emerge on how to use similar hierarchical nanostructuring to achieve power factor improvements. Ways that relax the adverse interdependence of the electrical conductivity and Seebeck coefficient are targeted, which allows power factor improvements. For this, elegant designs are required, that utilize for instance non-uniformities in the underlying nanostructured geometry, non-uniformities in the dopant distribution, or potential barriers that form at boundaries between materials. A few recent reports, both theoretical and experimental, indicate that extremely high power factor values can be achieved, even for the same geometries that also provide ultra-low thermal conductivities. Despite the experimental complications that can arise in having the required control in nanostructure realization, in this colloquium, we aim to demonstrate, mostly theoretically, that it is a very promising path worth exploring. We review the most promising recent developments for nanostructures that target power factor improvements and present a series of design ‘ingredients’ necessary to reach high power factors. Finally, we emphasize the importance of theory and transport simulations for materialoptimization, and elaborate on the insight one can obtain from computational tools routinely used in the electronic device communities. Graphical abstract

High thermoelectric performance of superionic argyrodite compound Ag8SnSe6

2016 ◽  
Vol 4 (24) ◽  
pp. 5806-5813 ◽  
Author(s):  
Lin Li ◽  
Yuan Liu ◽  
Jiyan Dai ◽  
Aijun Hong ◽  
Min Zeng ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Material ◽  
Power Factor ◽  
High Power ◽  
Figure Of Merit ◽  
Environmentally Friendly ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
High Power Factor ◽  
High Figure

A good thermoelectric material usually has a high power factor and low thermal conductivity for high figure of merit (ZT), and is also environmentally friendly and economical.

scholarly journals High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 406
Author(s):  
Chao Li ◽  
Haili Song ◽  
Zongbei Dai ◽  
Zhenbo Zhao ◽  
Chengyan Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
High Power ◽  
Hole Concentration ◽  
Thermoelectric Performance ◽  
Significant Suppression ◽  
Valence States ◽  
High Power Factor ◽  
Sb Doping

Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity result in inferior thermoelectric performance in pristine GeTe. Extrinsic dopants such as Sb, Bi, and Y could play a crucial role in regulating the hole concentration of GeTe because of their different valence states as cations and high solubility in GeTe. Here we investigate the thermoelectric performance of GeTe upon Sb doping, and demonstrate a high maximum zT value up to 1.88 in Ge0.90Sb0.10Te as a result of the significant suppression in thermal conductivity while maintaining a high power factor. The maintained high power factor is due to the markable enhancement in the Seebeck coefficient, which could be attributed to the significant suppression of hole concentration and the valence band convergence upon Sb doping, while the low thermal conductivity stems from the suppression of electronic thermal conductivity due to the increase in electrical resistivity and the lowering of lattice thermal conductivity through strengthening the phonon scattering by lattice distortion, dislocations, and twin boundaries. The excellent thermoelectric performance of Ge0.90Sb0.10Te shows good reproducibility and thermal stability. This work confirms that Ge0.90Sb0.10Te is a superior thermoelectric material for practical application.

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