Formation of Boundary Layer by Thermal Treatments in Mo/Si Stacking Layers.

1993 ◽  
Vol 5 (2) ◽  
pp. 26-31
Author(s):  
Tsutomu OGAWA ◽  
Munehiro MONDO ◽  
Hiroshi KUDO ◽  
Moriaki WAKAKI
1993 ◽  
Vol 5 (3) ◽  
pp. 74-79
Author(s):  
Tsutomu OGAWA ◽  
Munehiro MONDO ◽  
Hiroshi KUDO ◽  
Moriaki WAKAKI

Author(s):  
M.T. Jahn ◽  
J.C. Yang ◽  
C.M. Wan

4340 Ni-Cr-Mo alloy steel is widely used due to its good combination of strength and toughness. The mechanical property of 4340 steel can be improved by various thermal treatments. The influence of thermomechanical treatment (TMT) has been studied in a low carbon Ni-Cr-Mo steel having chemical composition closed to 4340 steel. TMT of 4340 steel is rarely examined up to now. In this study we obtain good improvement on the mechanical property of 4340 steel by TMT. The mechanism is explained in terms of TEM microstructures4340 (0.39C-1.81Ni-0.93Cr-0.26Mo) steel was austenitized at 950°C for 30 minutes. The TMTed specimen (T) was obtained by forging the specimen continuously as the temperature of the specimen was decreasing from 950°C to 600°C followed by oil quenching to room temperature. The thickness reduction ratio by forging is 40%. The conventional specimen (C) was obtained by quenching the specimen directly into room temperature oil after austenitized at 950°C for 30 minutes. All quenched specimens (T and C) were then tempered at 450, 500, 550, 600 or 650°C for four hours respectively.


Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.


Tellus B ◽  
2001 ◽  
Vol 53 (4) ◽  
pp. 441-461 ◽  
Author(s):  
E. D. NILSSON ◽  
Ü. RANNIK ◽  
M. KULMALA ◽  
G. BUZORIUS ◽  
C. D. O'DOWD

2007 ◽  
Vol 25 ◽  
pp. 49-55 ◽  
Author(s):  
S. Argentini ◽  
I. Pietroni ◽  
G. Mastrantonio ◽  
A. Viola ◽  
S. Zilitinchevich

Sign in / Sign up

Export Citation Format

Share Document