scholarly journals Measurement of the Diffusion Coefficients of Organic Vapor into Air by the Stefan Method(1st Report Measurement on the Diethyl Ether - Air System at 303K)

Netsu Bussei ◽  
2015 ◽  
Vol 29 (2) ◽  
pp. 90-96
Author(s):  
Naoki Matsunaga ◽  
Mohd Syafiq Aswad bin Mohd Rozin
Keyword(s):  
Diethyl Ether ◽  
Diffusion Coefficients ◽  
Organic Vapor ◽  
Air System

scholarly journals Gaseous Diffusion Coefficients of Dimethyl Ether and Diethyl Ether into Air, Nitrogen and Oxygen

Netsu Bussei ◽  
2006 ◽  
Vol 20 (2) ◽  
pp. 83-86 ◽  
Author(s):  
Naoki Matsunaga ◽  
Morio Hori ◽  
Akira Nagashima
Keyword(s):  
Dimethyl Ether ◽  
Diethyl Ether ◽  
Diffusion Coefficients ◽  
Gaseous Diffusion

MUTUAL DIFFUSION IN POLAR–NONPOLAR GASES: KRYPTON – SULPHUR DIOXIDE AND KRYPTON – DIETHYL ETHER

1966 ◽  
Vol 44 (11) ◽  
pp. 2595-2600 ◽  
Author(s):  
B. N. Srivastava ◽  
Anil Saran
Keyword(s):  
Diethyl Ether ◽  
Sulphur Dioxide ◽  
Diffusion Coefficients ◽  
Scintillation Counter ◽  
Interaction Parameters ◽  
Combination Rules ◽  
Lennard Jones ◽  
Mass Correction ◽  
Normal Diffusion ◽  
Interdiffusion Coefficients

The interdiffusion coefficients for the gas mixtures of Kr–SO2 and Kr–(C2H5)2O have been measured in the temperature range 1 to 45 °C by the two-bulb technique of Ney and Armistead using radioactive 85Kr as tracer. A scintillation counter has been used for analyzing the concentration of 85Kr at different times. A mass correction was applied to get the normal diffusion coefficients for both the systems.The experimental D12 values have been employed to get the unlike interaction parameters on the Lennard-Jones (12:6) potential and compared with those obtained by using the combination rules for a polar–nonpolar system and the force constants of the polar gas from viscosity as well as from second virial data. For interpreting second virial data for polar gases the assumption of an off-center dipole is found to yield better interaction parameters.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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