scholarly journals Automatic crystal orientation mapping of Kimberlite nodules using electron back scattered diffraction in the scanning electron microscope

1997 ◽  
Vol 3 (S2) ◽  
pp. 563-564
Author(s):  
Robert Davies ◽  
Valerie Randlè

Crystal orientation mapping (COM), which is also referred to as orientation imaging microscopy (OIM), is a powerful tool which opens up enormous possibilities for investigation of materials. The principle of COM is that the microstructure is displayed or mapped according to the orientation of sampled volumes of crystal. These data are obtained in the scanning electron microscope by moving either the electron beam or the specimen stage through predetermined steps and collecting an electron back-scatter diffraction (EBSD) pattern. Typically, a null orientation is represented by a black pixel and colours are used to depict orientations, thus allowing discrete orientation changes such as grain boundaries to be plotted directly in a map format. This is exemplified in figure 1 which shows an orientation map generated from pure aluminium which has undergone 5% cold rolling. The diffiiseness of EBSD patterns further permits strain changes to be mapped.


2015 ◽  
Vol 723 ◽  
pp. 544-547
Author(s):  
Xiang Wei Cheng ◽  
Da Jin Xiong ◽  
Chao Huo

Using intermittent bubbling carbonation method to prepare nanoCaCO3, the effect of crystal orientation agents on the morphology of nanoCaCO3 was studied. The nanoCaCO3 was characterized by means of field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), Laser particle analyzer. The results showed that the different shapes nanoCaCO3 was synthesized by adding different crystal orientation agents to control the shape of the product. The as-prepared CaCO3 were pure calcite crystal and the average particle sizes were within the range of 25.7 to 60.9 nm.


2006 ◽  
Vol 524-525 ◽  
pp. 109-114 ◽  
Author(s):  
Raphaël Pesci ◽  
Karim Inal ◽  
Sophie Berveiller ◽  
Etienne Patoor ◽  
Jean Sébastien Lecomte ◽  
...  

A Kossel microdiffraction experimental set up is under development inside a Scanning Electron Microscope (SEM) in order to determine the crystallographic orientation as well as the inter- and intragranular strains and stresses on the micron scale, using a one cubic micrometer spot. The experimental Kossel line patterns are obtained by way of a CCD camera and are then fully indexed using a home-made simulation program. The so-determined orientation is compared with Electron Back-Scattered Diffraction (EBSD) results, and in-situ tests are performed inside the SEM using a tensile/compressive machine. The aim is to verify a 50MPa stress sensitivity for this technique and to take advantage from this microscope environment to associate microstructure observations (slip lines, particle decohesion, crack initiation) with determined stress analyses.


2013 ◽  
Vol 21 (3) ◽  
pp. 16-20 ◽  
Author(s):  
Roy H. Geiss ◽  
Katherine P. Rice ◽  
Robert R. Keller

We demonstrate in this article an exciting new method for obtaining electron Kikuchi diffraction patterns in transmission from thin specimens in a scanning electron microscope (SEM) fitted with a conventional electron backscattered diffraction (EBSD) detector. We have labeled the method transmission EBSD (t-EBSD) because it uses off-the-shelf commercial EBSD equipment to capture the diffraction patterns and also to differentiate it from transmission Kikuchi diffraction available in the transmission electron microscope (TEM). Lateral spatial resolution of less than 10 nm has been demonstrated for particles and better than 5 nm for orientation mapping of thin films. The only new requirement is a specimen holder that allows the transmitted electrons diffracted from an electron transparent sample to intersect the EBSD detector. We briefly outline our development of the technique, followed by descriptions of sample preparation techniques and operating conditions. We then present examples of t-EBSD patterns from a variety of specimens, including particles of diameter <10 nm, wires of diameter <80 nm, and films with thicknesses from ~5 nm to 300 nm. Finally, we discuss the phenomenon in the context of Monte Carlo electron scattering simulations.


2005 ◽  
Vol 11 (4) ◽  
pp. 341-353 ◽  
Author(s):  
Xiaodong Tao ◽  
Alwyn Eades

We have explored the possibility of measuring small changes of orientation within grains by electron backscattering diffraction (EBSD), in the scanning electron microscope. Conventional orientation maps (using EBSD) index the orientation of each position on the sample separately. This does not give accurate results for small differences of orientation. We have studied methods of measuring small changes in orientation by measuring the change from one EBSD pattern to the next directly, without indexing either. Previous workers have measured the change of position of a zone axis in the EBSD pattern. We have compared this with an alternative method, which we show to be superior, of measuring the shift of the peaks in the Hough transform from one diffraction pattern to the next. This means that we are measuring the change of orientation of sets of crystal planes within the grain, rather than measuring the change of orientation of zone axes. We show that it is possible, with a standard EBSD configuration, to measure the shift of the Kikuchi bands to a precision of about a 10th of a pixel, which corresponds to a change of orientation in the sample of about 0.1 mrad (0.006°).


1997 ◽  
Vol 472 ◽  
Author(s):  
R.A. Schwarzer

ABSTRACTA system for acquisition and interpretation of Kikuchi patterns with computer-controlled electron microscopes is presented. It enables interactive as well as fully automated determination of individual grain orientations. Special features for automated crystal orientation mapping (ACOM) with the scanning electron microscope (SEM) are digital beam scan, autocalibration and dynamic focus controlled by the computer. With the present setup about three orientations per second can be measured unattendedly. In the transmission electron microscope (TEM) the on-line determination of Burgers vectors and identification of deformation systems are based on crystal orientation measurement. The characterization of dislocations is facilitated by the simulation of diffraction patterns on the computer as a function of specimen tilt.Crystal orientation maps are obtained by assigning to the raster points in the image a color specific for the grain orientation, the misorientation or character of the grain boundary. The dala set of grain orientations is used to calculate the Schmid factors grain by grain, the orientation distribution function (ODF) and the correlated as well as the uncorrelated misorientation distribution functions (MODF) which characterize crystallographic texture in a statistical sense.Applications of individual grain orientation measurement are:. Thermomechanical hillocks in aluminum metallization layers on silicon substrates. Stress-induced grain growth in aluminum metallization layers on silicon substrates. Electromigration voids and hillocks in aluminum interconnectsA working hypothesis for electromigration failure, based on experimental findings, is discussed


1999 ◽  
Vol 14 (10) ◽  
pp. 3983-3987 ◽  
Author(s):  
Yuanzheng Yue ◽  
Ralf Keding ◽  
Christian Rüssel

Highly oriented calcium metaphosphate glass-ceramics were obtained directly from the corresponding melt. On the interface between the Ca(PO3)2 melt and an Al2O3 rod, the nucleation could easily be induced. The dependence of the crystal growth rate on the crystallization temperature was determined. The crystal growth rates observed were up to 71 μm/s. The c axes of most crystals were oriented in the direction perpendicular to the surface of the Al2O3 rod as illustrated by scanning electron microscope and pole figures. The degree of crystal orientation increased with increasing crystallization temperature. At higher temperatures (e.g., at 892 °C), even single-crystal-like dendrites were formed.


Carbon ◽  
2019 ◽  
Vol 149 ◽  
pp. 400-406 ◽  
Author(s):  
Benjamin W. Caplins ◽  
Jason D. Holm ◽  
Robert R. Keller

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