Reasons of variations of individual diamond crystals and petrogenetic blocking of rocks in Udachnaya pipe

2016 ◽  
Vol 54 (8) ◽  
pp. 681-690 ◽  
Author(s):  
I. N. Bogush ◽  
Z. V. Spetsius ◽  
O. E. Koval’chuk ◽  
B. S. Pomazanskiy

CrystEngComm ◽  
2021 ◽  
Author(s):  
Shuai Fang ◽  
Yongkui Wang ◽  
Liangchao Chen ◽  
Zhiyun Lu ◽  
Zhenghao Cai ◽  
...  

Pressure is a necessary condition for the growth of natural diamond. Studying the effect of pressure on the nitrogen content of diamond is important for exploring the growth mechanism of...


2021 ◽  
Author(s):  
V. P. Mironov ◽  
E. A. Protasova ◽  
E. I. Lipatov ◽  
E. F. Martynovich

1989 ◽  
Vol 4 (2) ◽  
pp. 373-384 ◽  
Author(s):  
B. E. Williams ◽  
J. T. Glass

Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by Auger electron spectroscopy, secondary ion mass spectrometry, electron and x-ray diffraction, electron energy loss spectroscopy, and electron microscopy. They were determined to be similar to natural diamond in terms of composition, structure, and bonding. The surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas. Well-faceted diamond crystals were observed near the center of the sample whereas a less faceted, cauliflower texture was observed near the edge of the sample, presumably due to variations in temperature across the surface of the sample. Regarding methane concentration effects, threefold {111} faceted diamond crystals were predominant on a film grown at 0.3% CH4 in H2 while fourfold {100} facets were observed on films grown in 1.0% and 2.0% CH4 in H2. Transmission electron microscopy of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stacking faults, and dislocations. In addition, cross-sectional TEM has revealed a 50 Å epitaxial layer of β3–SiC at the diamond-silicon interface of a film grown with 0.3% CH4 in H2 while no such layer was observed on a diamond film grown in 2.0% CH4 in H2.


2015 ◽  
Vol 25 (5) ◽  
pp. 1587-1598 ◽  
Author(s):  
Qiu-ping WEI ◽  
Li MA ◽  
Jun YE ◽  
Zhi-ming YU

Carbon ◽  
1998 ◽  
Vol 36 (5-6) ◽  
pp. 581-585 ◽  
Author(s):  
E.V. Grigoryev ◽  
V.N. Savenko ◽  
D.V. Sheglov ◽  
A.V. Matveev ◽  
V.A. Cherepanov ◽  
...  

Minerals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1229
Author(s):  
Valeri Sonin ◽  
Egor Zhimulev ◽  
Aleksei Chepurov ◽  
Ivan Gryaznov ◽  
Anatoly Chepurov ◽  
...  

Diamond etching in high-temperature ambient-pressure experiments has been performed aimed to assess possible postimpact effects on diamonds in impact craters, for the case of the Popigai crater in Yakutia (Russia). The experiments with different etchants, including various combinations of silicate melts, air, and inert gases, demonstrated the diversity of microstructures on {111} diamond faces: negative or positive trigons, as well as hexagonal, round, or irregularly shaped etch pits and striation. The surface features obtained after etching experiments with kimberlitic diamonds are similar to those observed on natural impact diamonds with some difference due to the origin of the latter as a result of a martensitic transformation of graphite in target rocks. Extrapolated to natural impact diamonds, the experimental results lead to several inferences: (1) Diamond crystals experienced natural oxidation and surface graphitization during the pressure decrease after the impact event, while the molten target rocks remained at high temperatures. (2) Natural etching of diamonds in silicate melts is possible in a large range of oxidation states controlled by O2 diffusion. (3) Impact diamonds near the surface of molten target rocks oxidized at the highest rates, whereas those within the melt were shielded from the oxidizing agents and remained unchanged.


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