Managed Pressure Drilling For Optimizing Deepwater And High Pressure-High Temperature Operations In Indonesia

2018 ◽  
Author(s):  
Ardia Karnugroho
2021 ◽  
Author(s):  
Ahmed Ghamdi ◽  
Ahmed Saihati ◽  
Mohamed Abdelrahman ◽  
Mahmoud Omar ◽  
Abdulazeez Abdulraheem

Abstract Drilling in deep high-pressure high-temperature (HPHT) abrasive sandstone pose significant challenges: low rate of penetration (ROP), bit wear, differential sticking, and wellbore instability issues. These issues are magnified when attempting to drill long laterals in the direction of minimum stress. This paper focuses on the use of Managed Pressure Drilling (MPD) and Artificial Intelligence (AI) analytics to improve ROP. MPD is normally used to help drilling in formations with narrow mud weight window, it achieves this by controlling the surface backpressure to keep the annular pressure in the wellbore above the pore pressure and below the fracture gradient. One key benefit of using MPD is that high mud weight is no longer required, since the Equivalent Circulating Density (ECD) is going to be managed to maintain the overbalance. An example of a well that was drilled using MPD solely for ROP improvement is presented in this paper. This well achieved almost double the ROP of a control well, which was drilled in the same formation with no MPD. Essentially most of the drilling parameters used, which include, pump rate, revolution per minute (RPM), weight on bit (WOB), and other drilling practices, are controlled by the people on the rig. Incorporating AI analytics in the equation, help minimizes human intervention and could achieve further improvement in ROP. After the ROP improvement observed while using MPD, both technologies were combined in a well drilling the same formation. An example is presented for the well drilled using both technologies.


2019 ◽  
Vol 74 (4) ◽  
pp. 357-363
Author(s):  
Daniela Vitzthum ◽  
Hubert Huppertz

AbstractThe mixed cation triel borate Ga4In4B15O33(OH)3 was synthesized in a Walker-type multianvil apparatus at high-pressure/high-temperature conditions of 12.5 GPa and 1300°C. Although the product could not be reproduced in further experiments, its crystal structure could be reliably determined via single-crystal X-ray diffraction data. Ga4In4B15O33(OH)3 crystallizes in the tetragonal space group I41/a (origin choice 2) with the lattice parameters a = 11.382(2), c = 15.244(2) Å, and V = 1974.9(4) Å3. The structure of the quaternary triel borate consists of a complex network of BO4 tetrahedra, edge-sharing InO6 octahedra in dinuclear units, and very dense edge-sharing GaO6 octahedra in tetranuclear units.


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