Structure of water in a contact layer on the surface of crystalline silver iodide

2018 ◽  
Vol 59 (3) ◽  
Author(s):  
S.V. Shevkunov ◽  
Author(s):  
Huanyu Yang ◽  
Anthony Boucly ◽  
Jérôme Philippe Gabathuler ◽  
Thorsten Bartels-Rausch ◽  
Luca Artiglia ◽  
...  

Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


2018 ◽  
Author(s):  
Sandeep K. Reddy ◽  
Raphael Thiraux ◽  
Bethany A. Wellen Rudd ◽  
Lu Lin ◽  
Tehseen Adel ◽  
...  

Vibrational sum-frequency generation (vSFG) spectroscopy is used to determine the molecular structure of water at the interface of palmitic acid monolayers. Both measured and calculated spectra display speci c features due to third-order contributions to the vSFG response which are associated with nite interfacial electric potentials. We demonstrate that theoretical modeling enables to separate the third-order contributions, thus allowing for a systematic analysis of the strictly surface-sensitive, second-order component of the vSFG response. This study provides fundamental, molecular-level insights into the interfacial structure of water in a neutral surfactant system with relevance to single layer bio-membranes and environmentally relevant sea-spray aerosols. These results emphasize the key role that computer simulations can play in interpreting vSFG spectra and revealing microscopic details of water at complex interfaces, which can be difficult to extract from experiments due to the mixing of second-order, surface-sensitive and third-order, bulk-dependent contributions to the vSFG response.


Author(s):  
M.K. Dawood ◽  
C. Chen ◽  
P.K. Tan ◽  
S. James ◽  
P.S. Limin ◽  
...  

Abstract In this work, we present two case studies on the utilization of advanced nanoprobing on 20nm logic devices at contact layer to identify the root cause of scan logic failures. In both cases, conventional failure analysis followed by inspection of passive voltage contrast (PVC) failed to identify any abnormality in the devices. Technology advancement makes identifying failure mechanisms increasingly more challenging using conventional methods of physical failure analysis (PFA). Almost all PFA cases for 20nm technology node devices and beyond require Transmission Electron Microscopy (TEM) analysis. Before TEM analysis can be performed, fault isolation is required to correctly determine the precise failing location. Isolated transistor probing was performed on the suspected logic NMOS and PMOS transistors to identify the failing transistors for TEM analysis. In this paper, nanoprobing was used to isolate the failing transistor of a logic cell. Nanoprobing revealed anomalies between the drain and bulk junction which was found to be due to contact gouging of different severities.


1994 ◽  
Vol 30 (5) ◽  
pp. 261-268 ◽  
Author(s):  
Selmin Burak ◽  
I. Ethem Gönenç ◽  
Arzu Erol

This paper examines the administrative and legal structure of the wastewater sector in Turkey, identifying its shortcomings and their causes, and suggests solutions. The study begins by outlining the existing administrative and legal structure, then focusing on the areas where difficulties are faced and seeking solutions to them. Those administrative and legal facets which have produced improvements and/or function effectively have been analysed so as to provide examples for other areas. When examining the sector it was observed that problems common to every area are the failure to adequately define powers and responsibilities, the lack of coordination between sectoral organisations, and the fact that attention is generally concentrated on routine matters of secondary importance. The fact that numerous organisations share powers in the same area causes confusion. Plurality also creates difficulties where enforcement is concerned. The existence of more than one set of regulations relating to the same area gives rise to loopholes. At the same time, unrealistic, and hence unenforceable standards undermine the effectiveness of sanctions. It has been concluded that a single organisation should be invested with the legal powers to lay down the principles of water management, that environmental courts should be set up to enforce legislation by means of sanctions; and that for this purpose existing legislation should be reexamined and revised as necessary and/or brought up to date.


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