scholarly journals Platinum Silicide-Silicon Schottky Diode Characteristics

2018 ◽  
Vol 2 (2) ◽  
pp. 41
Author(s):  
S. N. Musaeva ◽  
E. A. Kerimov ◽  
N. F. Kazımov ◽  
S. I. Huseynova
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Additional Information ◽  
Platinum Silicide ◽  
Photoelectric Properties ◽  
Photoelectric Measurements

Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.

Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes

1988 ◽  
Vol 31 (5) ◽  
pp. 843-849 ◽  
Author(s):  
D. Moy ◽  
S. Basavaiah ◽  
C.T. Chuang ◽  
G.P. Li ◽  
E. Hackbarth ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Processing Conditions ◽  
Schottky Barrier Diodes ◽  
Platinum Silicide

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Synthesis of an electrically conductive square planar copper(ii) complex and its utilization in the fabrication of a photosensitive Schottky diode device and DFT study

2020 ◽  
Vol 44 (27) ◽  
pp. 11622-11630 ◽  
Author(s):  
Samim Khan ◽  
Soumi Halder ◽  
Arka Dey ◽  
Basudeb Dutta ◽  
Partha Pratim Ray ◽  
...  
Keyword(s):  
Charge Transport ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Chain Structure ◽  
Dft Study ◽  
Electrically Conductive ◽  
Π Interactions ◽  
Square Planar ◽  
Efficient Charge ◽  
Diode Behavior

A naphthalene based square planar copper(ii) complex shows significant C–H⋯π interactions to form a supramolecular chain structure. The complex shows efficient charge transport and reveals Schottky barrier diode behavior.

Platinum Silicide Schottky-Barrier IR-CCD Image Sensors

1981 ◽  
Author(s):  
M. KIMATA ◽  
M. DENDA ◽  
T. FUKUMOTO ◽  
N. TSUBOUCHI ◽  
S. UEMATSU ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Image Sensors ◽  
Platinum Silicide ◽  
Ccd Image

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Adam Łaszcz ◽  
Jacek Ratajczak ◽  
Andrzej Czerwinski ◽  
Jerzy Kątcki ◽  
Nicolas Breil ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Mos Transistors ◽  
Dopant Segregation ◽  
Platinum Silicide ◽  
Annealing Temperatures ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
The Impact

AbstractTransmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates for the reduction of the Schottky barrier height (SBH) of contacts and are realized by (i) implantation-through-metal (ITM) followed by dopant-segregation induced by silicidation annealing and (ii) implantation-through-silicide (ITS) followed by dopant-segregation due to the post-silicidation annealing. The studies showed that depending on the type and conditions of the process (ITM or ITS with various post-silicidation annealing temperatures) different morphologies of PtSi layers and PtSi/Si interfaces roughnesses are observed. Better quality silicide layers and silicide/silicon interfaces were found for samples after the ITS process with post-silicidation annealing at 500°C than for samples after the ITM process or the ITS process with post-silicidation annealing at temperatures not exceeding 400°C.The observed microstructure of grains and interfaces in these samples, along with the impact of the dopant-segregation, may significantly influence the SBH value. The diffraction patterns and EDXS measurements revealed that regardless of the process type, the formed silicide layer is always PtSi.

scholarly journals Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ren-Hao Chang ◽  
Kai-Chao Yang ◽  
Tai-Hong Chen ◽  
Li-Wen Lai ◽  
Tsung-Hsin Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Layer Surface ◽  
Barrier Heights ◽  
Ammonium Sulfide ◽  
Current Voltage ◽  
Contact Electrode

We prepare a zinc oxide- (ZnO-) based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO-) ZnO ohmic contact electrode and Ni/Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2) and ammonium sulfide (NH4)2Sxsolutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) investigations, the compensation effect as evidence of the increases in the O–H and OZnacceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH4)2Sxsolution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond andVZnacceptors.

Platinum Silicide Schottky-Barrier IR-CCD Image Sensors

1982 ◽  
Vol 21 (S1) ◽  
pp. 231 ◽  
Author(s):  
Masafumi Kimata ◽  
Masahiko Denda ◽  
Takaaki Fukumoto ◽  
Natsuro Tsubouchi ◽  
Shigeyuki Uematsu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Image Sensors ◽  
Platinum Silicide ◽  
Ccd Image

Temperature Dependent DC and RF Performance of n-GaN Schottky Diode: A Numerical Approach

2014 ◽  
Vol 895 ◽  
pp. 439-443
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Mohd Fadzil Ain
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Insertion Loss ◽  
Ideality Factor ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Numerical Approach ◽  
Temperature Dependent ◽  
In Series ◽  
Rf Performance

This paper reports the temperature dependent DC and RF characteristics of n-GaN Schottky diode simulated using Atlas/Blaze developed by Silvaco. It was found that as the temperature increases from 300K to 900K the forward current decreases due to lowering of the Schottky barrier with an increase in series-resistance and ideality factor. These observations indicates that tunneling behavior dominates the current flow rather than thermionic emission. Furthermore, the breakdown voltage decreases in reverse bias and insertion loss for RF behavior increases with respect to temperature due to the increase in capacitance near diode junction.Keywords: Atlas/Blaze, Schottky barrier, series resistance, ideality factor, insertion loss.

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