Synthesis and Characterization of Cadmium Sulfide Thin Film Grown by Chemical Bath Deposition Method

2015 ◽  
Vol 2 (2) ◽  
pp. 79-81
Author(s):  
Thambidurai.S ◽  
Kannan.P
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Chemical Bath Deposition Method ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Cds Thin Films

CdS thin films were prepared by chemical bath deposition method on glass substrate, Bath temperature range of 800C. Steps using aqueous solution of cadmium sulphate and thiourea salts were used as cadmium Cd+2 and sulfur S-2 ions sources to prepare CdS thin films. Structural characterization was carried out by X-ray diffraction and optical transmission was carried out by UV-Vis spectrometer. Photoluminescence spectra were recorded in the in the range of 300 – 900 nm at the temperature range of 10 K

scholarly journals Deposition and characterization of Cu4SnS4 thin films by chemical bath deposition method

2010 ◽  
Vol 29 (1) ◽  
pp. 97 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Abdul Halim Abdullah ◽  
Saravanan Nagalingam ◽  
Ho Soon Min
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Chemical Bath Deposition ◽  
Chemical Bath Deposition Method ◽  
Oxide Glass ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

A low cost chemical bath deposition method has been used for the preparation of Cu4SnS4 thin films onto indium tin oxide glass substrate. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (1.5) were optimized to obtain good quality thin films. The structural, surface morphological and optical properties of thin films were studied by X-ray diffraction, an atomic force microscopy and an UV-Vis Spectrophotometer, respectively. The X-ray diffraction study revealed that the Cu4SnS4 films were polycrystalline in nature with the preferential orientation along the (221) plane. The atomic force microscopy results indicated that the films were smooth, uniform and the substrate surface was covered completely at these experimental conditions. These films exhibited p-type semiconductor behavior with the band gap energy about 1.57 eV.

scholarly journals Synthesis and characterization of PbS nanowires doped with Tb3+ ions by using chemical bath deposition method

2019 ◽  
Vol 10 (1) ◽  
pp. 1-7 ◽  
Author(s):  
L. F. Koao ◽  
Fekadu Gashaw Hone ◽  
F. B. Dejene
Keyword(s):  
Band Gap ◽  
Chemical Bath Deposition ◽  
Potassium Hydroxide ◽  
Luminescent Properties ◽  
Deposition Process ◽  
Chemical Bath Deposition Method ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray

AbstractCrystalline lead sulfide (PbS) nanowires doped with terbium (Tb3+) ions were synthesized by the chemical bath deposition method at room temperature. The powder was obtained from an aqueous solutions using lead acetate dehydrate, terbium nitrate, thiourea, potassium hydroxide and ammonia. The terbium molar concentrations were varied in the deposition process to investigate the effect on the structural, optical, morphological and luminescent properties of PbS nanowires. The crystalline size was found to be dependent on the concentration of the Tb3+ ions used. The estimated average crystalline sizes were calculated from the X-ray diffraction and found to be 34, 33 and 37 nm for PbS: 0% Tb3+, PbS: 0.2% Tb3+ and PbS: 0.5% Tb3+, respectively. The scanning electron microscopy micrographs depict nanowire shape for the undoped as well as Tb-doped samples. The energy-dispersive X-ray and Auger electron spectroscopy analyses confirmed the presence of all the expected elements. The solid powder nanowires exhibited high absorptions in the UV–Vis regions. The band gap energies were estimated in the range of 1.99–2.46 eV. The absorption edge and the band gap energies of these PbS nanowires have shifted depending on the concentration of the dopant. The maximum luminescence intensity was obtained for PbS: 0.2% Tb3+ ions and luminescent quenching was observed for higher terbium concentrations. Graphic abstract

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

Studies on Dilute Magnetic Semiconducting Co-Doped CdS Thin Films Prepared by Chemical Bath Deposition method

2017 ◽  
Vol 28 (16) ◽  
pp. 12092-12099 ◽  
Author(s):  
S. Saravanakumar ◽  
R. Chandramohan ◽  
R. Premarani ◽  
J. Jebaraj Devadasan ◽  
J. Thirumalai
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Chemical Bath Deposition Method ◽  
Deposition Method ◽  
Cds Thin Films ◽  
Co Doped
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