Designing an ion trap for quantum simulation

2009 ◽  
Vol 9 (5&6) ◽  
pp. 361-375
Author(s):  
I.M. Buluta ◽  
S. Hasegawa

Planar Coulomb crystals have been recently proposed for the implementation of quantum simulation and computation. In order to put this idea into practice we designed a specialized RF ion trap system. The design is based on extensive numerical simulations of planar Coulomb crystals in RF traps and the estimation of the error in quantum simulation and computation. Our trap would have reduced heating rates and large axial confinement frequencies would be available. Moreover, it provides very good optical access and it is easy to construct and operate.

2008 ◽  
Vol 77 (6) ◽  
Author(s):  
I. M. Buluta ◽  
M. Kitaoka ◽  
S. Georgescu ◽  
S. Hasegawa

2019 ◽  
Vol 11 (1) ◽  
Author(s):  
J. Keller ◽  
D. Kalincev ◽  
T. Burgermeister ◽  
A. P. Kulosa ◽  
A. Didier ◽  
...  

2008 ◽  
Vol 22 (07) ◽  
pp. 467-474 ◽  
Author(s):  
L. SHE ◽  
J. M. LI ◽  
K. L. GAO

We propose a method to accelerate the revival of ion Rabi oscillation in a trapped ion system. Suitable manipulation of the frequency of the driven laser field permits us to switch from Jaynes–Cummings to off-resonant interaction. The combination of Jaynes–Cummings model and the off-resonant model induces some interesting characteristics of the ion-trap system, particularly the accelerated revival of the population of trapped ions. The amplitude of this revival is sensitive to the change of the laser frequency.


2009 ◽  
Vol 23 (18) ◽  
pp. 2229-2233
Author(s):  
DA-RONG QIU ◽  
LIU YE
Keyword(s):  
Ion Trap ◽  

We propose an experimentally feasible scheme for implementing a two-ion swap gate in the context of the ion-trap system. In this scheme, we drive the ion with one laser beam and we map the states of one ion and the motional mode to each other. The scheme is based on resonant sideband excitation, and thus it may be realized with current ion-trap techniques.


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