DESIGN OF LINEARITY IMPROVED ASYMMETRICAL GAN DOHERTY POWER AMPLIFIER USING COMPOSITE RIGHT/LEFT-HANDED TRANSMISSION LINES

2013 ◽  
Vol 53 ◽  
pp. 89-106 ◽  
Author(s):  
Yunxuan Feng ◽  
Yuanan Liu ◽  
Cuiping Yu ◽  
Shulan Li ◽  
Jiuchao Li ◽  
...  
2017 ◽  
Vol 27 (3) ◽  
pp. 293-295 ◽  
Author(s):  
Hwiseob Lee ◽  
Wonseob Lim ◽  
Wooseok Lee ◽  
Hyunuk Kang ◽  
Jongseok Bae ◽  
...  

2008 ◽  
Vol 18 (8) ◽  
pp. 533-535 ◽  
Author(s):  
Seung Hun Ji ◽  
Sang Ki Eun ◽  
Choon Sik Cho ◽  
Jae W. Lee ◽  
Jaeheung Kim

2021 ◽  
Author(s):  
Pouya Jahanian ◽  
Azadeh Norouzi Kangarshahi

Abstract In this paper, an attempt has been made to design a Doherty power amplifier (DPA) with high-gain and wide-band. For this purpose, two peak amplifiers are used to improve the performance of the main amplifier. Main and auxiliary amplifiers with the same structure to the class-AB type and by using micro-strip lines in place of input/output and load matching networks, transmission lines and inductors of drain and gate, that minimize the losses in the DPA. The current DPA is implemented with GaN_HEMT_CLF1G0530_100v transistor and Rogers4003 substrate, which for 1GHz frequency in 0.5-1.5GHz bandwidth will be able to be at P-1dB point (this point, input power as 30dBm and output power as 47.98dBm) increase Drain efficiency and Power added efficiency (PAE) to 81.95% and 80.73%, respectively. The DPA helps to expand the back-off region and extend the linearity region, so the Peak to average power ratio (PAPR) will be 5.21dB and the Adjacent channel power ratio (ACPR) as 58.7dBc. A gain of 17.06-17.92dB was also obtained, which is significant compared to the results of similar samples.


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