Casing Failure Mechanism and Characterization under HPHT Conditions in South Texas

Author(s):  
Zhaoguang Yuan ◽  
Jerome Schubert ◽  
Urdaneta Carbonell Esteban ◽  
Prasongsit Chantose ◽  
Catalin Teodoriu
2013 ◽  
Author(s):  
Zhaoguang Yuan ◽  
Jerome Schubert ◽  
Urdaneta Carbonell Esteban ◽  
Prasongsit Chantose ◽  
Catalin Teodoriu

2017 ◽  
Vol 9 (8) ◽  
pp. 168781401771718 ◽  
Author(s):  
Tiejun Lin ◽  
Hao Yu ◽  
Zhanghua Lian ◽  
Biao Sun

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2013 ◽  
Vol 31 (2) ◽  
pp. 228-229
Author(s):  
N. Fowler
Keyword(s):  

2008 ◽  
Vol 11 (-1) ◽  
pp. 188-201 ◽  
Author(s):  
Piotr Bogacz ◽  
Jarosława Kaczmarek ◽  
Danuta Leśniewska

Fact Sheet ◽  
2012 ◽  
Author(s):  
Diana E. Pedraza ◽  
Darwin J. Ockerman

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