Characterization of Transient Operation of a Quasi-DC Electrical Discharge in Supersonic Flow

2017 ◽  
Author(s):  
Alec W. Houpt ◽  
Brock E. Hedlund ◽  
Sergey B. Leonov ◽  
Skye Elliot ◽  
Timothy Ombrello ◽  
...  
Keyword(s):  
Supersonic Flow ◽  
Electrical Discharge ◽  
Transient Operation

scholarly journals Time- and spatially-resolved characterization of electrical discharge machining plasma

2008 ◽  
Vol 17 (2) ◽  
pp. 024008 ◽  
Author(s):  
A Descoeudres ◽  
Ch Hollenstein ◽  
G Wälder ◽  
R Demellayer ◽  
R Perez
Keyword(s):  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Spatially Resolved

Microstructural Characterization of Thermal Damage on Silicon Wafers Sliced Using Wire-Electrical Discharge Machining

2018 ◽  
Vol 140 (9) ◽  
Author(s):  
Kamlesh Joshi ◽  
Upendra Bhandarkar ◽  
Indradev Samajdar ◽  
Suhas S. Joshi
Keyword(s):  
Raman Spectroscopy ◽  
Electrical Discharge ◽  
Thermal Damage ◽  
Electrical Discharge Machining ◽  
Wafer Surface ◽  
Wire Electrical Discharge Machining ◽  
Wire Edm ◽  
Material Loss ◽  
Pulse On Time

Slicing of Si wafers through abrasive processes generates various surface defects on wafers such as cracks and surface contaminations. Also, the processes cause a significant material loss during slicing and subsequent polishing. Recently, efforts are being made to slice very thin wafers, and at the same time understand the thermal and microstructural damage caused due to sparking during wire-electrical discharge machining (wire-EDM). Wire-EDM has shown potential for slicing ultra-thin Si wafers of thickness < 200 μm. This work, therefore, presents an extensive experimental work on characterization of the thermal damage due to sparking during wire-EDM on ultra-thin wafers. The experiments were performed using Response surface methodology (RSM)-based central composite design (CCD). The damage was mainly characterized by scanning electron microscope (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The average thickness of thermal damage on the wafers was observed to be ∼16 μm. The damage was highly influenced by exposure time of wafer surface with EDM plasma spark. Also, with an increase in diameter of plasma spark, the surface roughness was found to increase. TEM micrographs have confirmed the formation of amorphous Si along with a region of fine grained Si entrapped inside the amorphous matrix. However, there were no signs of other defects like microcracks, twin boundaries, or fracture on the surfaces. Micro-Raman spectroscopy revealed that in order to slice a wafer with minimum residual stresses and very low presence of amorphous phases, it should be sliced at the lowest value of pulse on-time and at the highest value of open voltage (OV).

FT-IR, SIMS and electrical characterization of Si3N4 thin films obtained from CVD, assisted by in situ electrical discharge

1993 ◽  
Vol 24 (4) ◽  
pp. 389-393
Author(s):  
B. Balland ◽  
R. Botton ◽  
M. Lemiti ◽  
J.C. Bureau ◽  
A. Glachant
Keyword(s):  
Thin Films ◽  
Electrical Discharge ◽  
Electrical Characterization ◽  
Ft Ir

Characterization of Methane Emissions from a Natural Gas-Fuelled Marine Vessel under Transient Operation

2021 ◽  
Author(s):  
David Cohen Sacal ◽  
Joel Corbin ◽  
Stéphanie Gagné ◽  
Harly Penner ◽  
Patrick Kirchen
Keyword(s):  
Natural Gas ◽  
Methane Emissions ◽  
Transient Operation

Optical Characterization of Flowfield behind Spanwise Pin-Array in Supersonic Flow

2022 ◽  
Author(s):  
Philip Lax ◽  
Skye Elliott ◽  
Stanislav Gordeyev ◽  
Sergey B. Leonov
Keyword(s):  
Supersonic Flow ◽  
Optical Characterization
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