Laser Light Scattering from Equilibrium, High Temperature Gases: Limitations on Rayleigh Scattering Thermometry

Author(s):  
Christopher Limbach ◽  
Ciprian Dumitrache ◽  
Azer P. Yalin
1995 ◽  
Vol 170 (1) ◽  
pp. 102-112 ◽  
Author(s):  
Benjamin Chu ◽  
Zukang Zhou ◽  
Guangwei Wu ◽  
Harold M. Farrell

1998 ◽  
Vol 814 (1-2) ◽  
pp. 55-61 ◽  
Author(s):  
Roger Trones ◽  
Thomas Andersen ◽  
Iris Hunnes ◽  
Tyge Greibrokk

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.


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