Effects of the Plasma Actuation on the Asymmetric Vortex around an Ogive Body at High Incidence

2012 ◽  
Author(s):  
Eunseok Lee ◽  
Jin-Ik Lee ◽  
Kwang-Seop Lee ◽  
Jurgen Seidel ◽  
Christopher Porter ◽  
...  
Keyword(s):  
Asymmetric Vortex ◽  
Plasma Actuation ◽  
High Incidence

Optimized plasma actuation on asymmetric vortex over a slender body

2018 ◽  
Vol 112 (1) ◽  
pp. 014101 ◽  
Author(s):  
Yuexiao Long ◽  
Huaxing Li ◽  
Xuanshi Meng ◽  
Haiyang Hu
Keyword(s):  
Slender Body ◽  
Asymmetric Vortex ◽  
Plasma Actuation

Open-Loop Dynamics of the Asymmetric Vortex Wake behind a von Kármán Ogive at High Incidence

2013 ◽  
Vol 5 (1) ◽  
pp. 59-78 ◽  
Author(s):  
Casey Fagley ◽  
John Farnsworth ◽  
Chris Porter ◽  
Jürgen Seidel ◽  
Thomas McLaughlin ◽  
...  
Keyword(s):  
Open Loop ◽  
Vortex Wake ◽  
Asymmetric Vortex ◽  
Von Karman ◽  
Loop Dynamics ◽  
High Incidence ◽  
Von Kármán

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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