Destabilizing Role of Low-Energy Ions in Acceleration Channel of Hall Thruster

2005 ◽  
Author(s):  
Alexander Kapulkin ◽  
Moshe Guelman
Keyword(s):  
Low Energy ◽  
Hall Thruster ◽  
Acceleration Channel ◽  
Low Energy Ions

The Progress of Ion Beam Bioengineering in China

2005 ◽  
Vol 107 ◽  
pp. 25-30 ◽  
Author(s):  
Zeng Liang Yu
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Energy Particle ◽  
Particle Radiation ◽  
Damage Rate ◽  
Chinese Academy Of Sciences ◽  
New Varieties ◽  
Academy Of Sciences ◽  
Low Energy Ions

Low-energy ion beam has widely been applied in the field of research on genetic modification since the 1980’s in China. It has been shown, in principle and practice, that ion beam, as a new mutagenic source, has many outstanding advantages: lower damage rate, higher mutation and wider mutational spectrum. Many new varieties of crops and microbes have been bred using these techniques and used in agricultural and industrial production. Meanwhile the method of transferring genes assisted by ion beam has also been developed. Scientists in China have begun to pay a big attention to study on ion beam biology. Up to now there have been seven key laboratories of ion beam bioengineering of Chinese Academy of Sciences and Chinese Provinces to be in succession created. Recent advances in research on ion beam biology have opened new areas of study in the field of life sciences, such as the role of low energy ions in the chemical origin and the interplanetary molecules forming, the health risk of low-energy particle radiation in the environment.

A role of multiple scattering in the interaction of low energy ions with a cold Au surface covered by a film of condensed xenon

Vacuum ◽  
1995 ◽  
Vol 46 (5-6) ◽  
pp. 609-611
Author(s):  
W Soszka ◽  
M Baster ◽  
S Kwaśny ◽  
P Piekarz ◽  
M Soszka
Keyword(s):  
Multiple Scattering ◽  
Low Energy ◽  
Low Energy Ions

The role of the electronic structure in charge exchange between low energy ions and surfaces

1988 ◽  
Vol 197 (1-2) ◽  
pp. 277-294 ◽  
Author(s):  
D.J. O'Connor ◽  
Y.G. Shen ◽  
J.M. Wilson ◽  
R.J. MacDonald
Keyword(s):  
Electronic Structure ◽  
Charge Exchange ◽  
Low Energy ◽  
Low Energy Ions

(Invited) Role of Low-Energy Ions during Plasma-Enhanced Atomic Layer Deposition

2021 ◽  
Vol MA2021-02 (29) ◽  
pp. 877-877
Author(s):  
Karsten Arts ◽  
Wilhelmus M. M. Kessels ◽  
Harm Knoops
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Energy ◽  
Layer Deposition ◽  
Low Energy Ions

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

The role of an energy-dependent inner potential in quantitative low-energy electron diffraction

2000 ◽  
Vol 458 (1-3) ◽  
pp. 155-161 ◽  
Author(s):  
S Walter ◽  
V Blum ◽  
L Hammer ◽  
S Müller ◽  
K Heinz ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Energy Dependent

Ion-Assisted Surface Processing of Electronic Materials

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 52-57 ◽  
Author(s):  
S.T. Picraux ◽  
E. Chason ◽  
T.M. Mayer
Keyword(s):  
Plasma Etching ◽  
Electronic Materials ◽  
Low Energy ◽  
Surface Processing ◽  
Wave Guides ◽  
Side Walls ◽  
Wet Chemical ◽  
Low Energy Ions ◽  
Metal Layers ◽  
Defect Densities

Why are low-energy ions relevant to the surface processing of electronic materials? The answer lies in the overriding trend of miniaturization in microelectronics. The achievement of these feats in ultrasmall architecture has required surface processing capabilities that allow layer addition and removal with incredible precision. The resulting benefits of greater capacity and speed at a plummeting cost per function are near legendary.The ability of low-energy ions to enhance the precision of surface etching, cleaning, and deposition/growth processes (Figure 1) provides one basis for the interest in ion-assisted processes. Low-energy ions are used, for example, to enhance the sharpness of side walls in plasma etching and to improve step coverage by metal layers in sputter deposition. Emerging optoelectronic applications such as forming ridges for wave-guides and ultrasmooth vertical surfaces for lasers further extend piesent requirements, and low-energy ions again provide one tool to help in this area of ultraprecise materials control. Trends associated with the decreased feature size include the movement from wet chemical processing to dry processing, the continuing need for reductions in defect densities, and the drive toward reduced temperatures and times in process steps.How do the above trends focus interest on studies of low-energy ion-assisted processes? In current applications, these trends are driving the need for increased atomic-level understanding of the ion-enhancement mechanisms, for example, in reactive ion etching to minimize defect production and enhance surface chemical reactions.

Modelling Interaction Cross Sections for Intermediate and Low Energy Ions

2002 ◽  
Vol 99 (1) ◽  
pp. 49-51 ◽  
Author(s):  
L. H. Toburen ◽  
J. L. Shinpaugh ◽  
E. L. B. Justiniano
Keyword(s):  
Cross Sections ◽  
Low Energy ◽  
Low Energy Ions ◽  
Interaction Cross Sections
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